Memory Cell Programming With Dynamic Channel Voltage Adjustment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing flash memory technologies face challenges in efficiently programming memory cells with dynamic channel voltage levels, particularly in multi-level cell configurations, leading to inefficiencies in threshold voltage distribution and programming accuracy.
Innovation Solution
The implementation of dynamic modification of channel voltage levels in response to the number of memory cells passing verify during programming, optimizing voltage levels for subsequent pulses to improve the number of cells achieving the desired data states and narrowing the threshold voltage distributions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If fixed voltage levels are used for programming memory cells, then the programming process is simple to control, but the threshold voltage distribution becomes wide and programming accuracy deteriorates
Solution Approach 1:
The patent applies dynamics by transitioning from fixed voltage levels to dynamic voltage levels that adapt during the programming process. The channel voltage is adjusted based on the number of cells passing verify, allowing the system to optimize programming accuracy while managing complexity through adaptive control rather than static parameters.
Solution Approach 2:
The patent implements feedback by using verify results to determine subsequent voltage levels. The system continuously monitors how many cells pass the verify threshold and uses this information to adjust the channel voltage for the next programming pulse, creating a closed-loop control system that improves precision.
2Productivity
If higher voltage levels are applied to program more cells, then programming speed increases, but the threshold voltage distribution widens and accuracy decreases
Solution Approach 1:
The patent applies partial action by using different voltage levels for different subsets of cells. Instead of applying a single high voltage to all cells, the system uses higher voltages for cells that need more programming (those not passing verify) and lower voltages for cells that are already close to the target, optimizing both speed and distribution tightness.
3Manufacturing precision
If dynamic modification of channel voltage levels is implemented, then programming accuracy and threshold voltage distribution improve, but the control mechanism becomes more complex
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the channel voltage parameter based on verify results. The system changes the voltage parameter from a fixed value to a variable that adapts during programming, improving threshold voltage distribution while managing complexity through systematic parameter adjustment rather than complex circuit modifications.
Data Source
AI summary
Memories might include a controller configured to cause the memory to develop a respective voltage level in a channel of each memory cell of a plurality of memory cells selected for a programming operation, apply a programming voltage level to a selected access line of the programming operation, determine a number of memory cells of the plurality of memory cells passing verify for each data state of a subset of data states, selectively modify values of the respective channel voltage levels in response to at least the determined number of memory cells passing verify for each of the data states of the subset of data states, and perform a subsequent programming operation using the selectively modified values of the channel voltage levels.