3D Memory Cell Block Layout With Variable Channel Spacing
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Solution Overview
Problem
Existing semiconductor devices face challenges in increasing data storage capacity and reliability while maintaining integration density.
Innovation Solution
A semiconductor device design featuring first and second electrode structures with varying widths and channel arrangements, including first and second channels with distinct spacings and widths, to enhance integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If electrode structures with varying widths and different channel spacings are used, then integration density is improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by varying the width of electrode structures and spacing of channels in different regions of the memory device. Specifically, edge columns have different channel spacings compared to intermediate columns, allowing optimization of storage capacity in different areas while managing complexity through localized structural variations rather than uniform design throughout.
Solution Approach 2:
The memory device is segmented into different column types (edge columns and intermediate columns) with distinct channel spacings and electrode widths. This segmentation allows independent optimization of each segment's parameters to maximize integration density while maintaining manufacturability within each segment type.
2Reliability
If more channels are added to increase data storage capacity, then reliability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes geometric parameters of the channel structures, specifically varying the spacing between channels in edge columns versus intermediate columns. By adjusting these spatial parameters, the design optimizes channel density and data storage capacity while maintaining manufacturing feasibility through controlled variations in channel dimensions and spacing.
Data Source
AI summary
A semiconductor device may include a first cell block including a first electrode structure including first electrodes stacked on a substrate, and first channels penetrating the first electrode structure, and a second cell block including a second electrode structure including second electrodes stacked on the substrate, and second channels penetrating the second electrode structure. The first and second electrode structures may extend in a first direction. The first electrode structure may have a first width in a second direction, and the second electrode structure may have a second width greater than the first width. A side surface of the first electrode structure and the first channel adjacent thereto may be apart from each other by a first distance, and a side surface of the second electrode structure and the second channel adjacent thereto may be apart from each other by a second distance different from the first distance.