3D Memory Cell Sealant Material for Diffusion Isolation

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Solution Overview

Problem

In three-dimensional memory arrays, material diffusion between memory cells and other components, such as selenium out-diffusion and oxygen in-diffusion, occurs due to heat, affecting performance and stability, and existing sealant materials may cause further degradation.

Innovation Solution

A sealant material with a high dielectric constant is deposited between memory cells and pillars to prevent or reduce diffusion, using low-temperature deposition techniques to maintain cell integrity and reduce degradation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If sealant material is deposited between memory cells and pillars, then material diffusion is prevented and cell stability is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvememory cell stabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent changes the dielectric constant parameter of the sealant material to a high value (greater than other materials in the pillar), which enables low-temperature deposition. This parameter change resolves the contradiction by allowing effective sealing without requiring complex high-temperature processing equipment or multiple deposition steps.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The sealant material acts as an intermediary layer between the memory cell and the pillar, preventing direct contact and diffusion between these components. This intermediary layer simplifies the overall structure by providing a single-function barrier material that addresses multiple potential diffusion pathways simultaneously.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If high dielectric constant sealant material is used, then deposition temperature is reduced and cell integrity is maintained, but manufacturing precision requirements increase

Engineering Contradiction:
Improvedeposition temperatureVSAvoiddeposition precision
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

By changing the dielectric constant parameter of the sealant material to a high value, the patent enables deposition at lower temperatures. This parameter change reduces thermal stress and material degradation, thereby maintaining cell integrity while simplifying the manufacturing process through standard low-temperature deposition techniques.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If sealant material prevents material diffusion, then memory cell purity is maintained and performance is improved, but power consumption increases

Engineering Contradiction:
Improvememory cell purityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The sealant material is deposited in advance during the manufacturing process to create a permanent diffusion barrier. This preliminary action prevents material diffusion throughout the device's operational life, eliminating the need for continuous power-consuming active protection mechanisms and thereby reducing overall power consumption while maintaining cell purity.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The high dielectric constant sealant material enhances memory cell stability, improves security and authentication features, reduces power consumption, and extends the lifespan of electronic devices by minimizing material diffusion and maintaining cell purity.

Implementation Method 1

A sealant material with a high dielectric constant is deposited between memory cells and pillars to prevent or reduce diffusion, using low-temperature deposition techniques to maintain cell integrity and reduce degradation.

Methodology Applied
Scientific EffectDeposition: Deposition (physical)

Data Source

PatentUS20250323110A1Memory cell sealant material in a three-dimensional memory array
Publication Date: 2025.10.16 MICRON TECHNOLOGY INC
  • US20250323110A1 patent drawing
  • US20250323110A1 patent drawing
  • US20250323110A1 patent drawing

AI summary

Methods, systems, and devices for a memory cell sealant material in a three-dimensional memory array are described. After forming a memory cell, a sealant material may be formed. The sealant material may include some material with a relatively high dielectric constant on the memory cell. The sealant material may be located between the memory cell and a pillar and may prevent or reduce diffusion between the memory cell and the pillar while supporting the memory cell being accessed. The sealant material may be formed as one or more layers of materials and may be associated with a relatively high dielectric constant, such that the sealant material may support low temperature deposition.