Memory Cell Programming Using Discovery Pulse for Voltage Threshold Control
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Solution Overview
Problem
Current memory programming methods in flash memory devices require numerous programming pulses and verify pulses, leading to high power consumption due to incremental step pulse programming schemes.
Innovation Solution
The method involves determining a relationship between the applied voltage level and resulting threshold voltage (VgVt) to identify groups of memory cells and apply a discovery programming pulse, followed by a stepped programming pulse to efficiently program memory cells to their intended data states, potentially reducing the number of program-verify phases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If incremental step pulse programming scheme is used, then memory cells can be programmed to intended data states, but power consumption increases due to numerous programming pulses and verify pulses
Solution Approach 1:
The patent applies preliminary action by performing a discovery programming pulse before the main programming operation to determine the relationship between applied voltage and resulting threshold voltage. This preliminary characterization allows the system to calculate the optimal programming pulse voltage and width, reducing the need for multiple iterative verify pulses and thereby lowering overall power consumption while maintaining programming accuracy.
Solution Approach 2:
The patent utilizes parameter changes by dynamically adjusting the programming pulse voltage and width based on the discovered VgVt relationship. Instead of using fixed incremental voltage steps, the system modifies pulse parameters according to the calculated optimal values, enabling more efficient programming with fewer pulses and reduced power consumption while achieving the same programming reliability.
2Manufacturing precision
If numerous programming pulses are applied, then memory cells reach intended threshold voltages, but programming time increases
Solution Approach 1:
The discovery programming pulse performs preliminary characterization of the memory cell's voltage-threshold relationship, enabling the system to calculate optimal programming parameters in advance. This preliminary action eliminates the need for multiple iterative verify pulses, significantly reducing programming time while maintaining precise threshold voltage control.
Solution Approach 2:
The patent applies skipping by directly transitioning to the optimal programming pulse parameters calculated from the VgVt relationship, bypassing the traditional incremental step-by-step approach. This allows the system to rush through the programming process more efficiently by applying the correct voltage and pulse width directly, reducing the number of pulses needed while maintaining precision.
3Measurement precision
If traditional verify pulses are used after each programming pulse, then programming accuracy is maintained, but the number of pulses and power consumption increase
Solution Approach 1:
The discovery programming pulse performs preliminary verification by establishing the VgVt relationship before main programming, allowing the system to predict the outcome of programming pulses. This reduces the need for subsequent verify pulses, decreasing the total number of pulses while maintaining measurement precision through the calculated optimal parameters.
Solution Approach 2:
The patent implements feedback by using the measured threshold voltage from the discovery programming pulse to calculate and adjust subsequent programming pulse parameters. This feedback mechanism ensures programming accuracy is maintained while reducing the number of verify pulses needed, as the system continuously adapts based on the observed voltage-threshold relationship.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the number of programming pulses required, thereby decreasing power consumption and improving programming efficiency by enabling memory cells to be programmed to their intended data states with fewer pulses.
Implementation Method 1
a voltage level of the programming pulse is expected to shift threshold voltages of the memory cells to a range of threshold voltages corresponding to an intended data state
Data Source
AI summary
Methods of operating a memory, and memories configured to perform such methods, might include applying a programming pulse having a plurality of different voltage levels to a selected access line during a programming operation, and for each group of memory cells of a plurality of groups of memory cells of a plurality of memory cells selected for programming, enabling that group of memory cells for programming during a respective portion of the duration of the programming pulse of a corresponding voltage level of the plurality of different voltage levels, wherein memory cells of the plurality of memory cells selected for programming and having a particular intended data state are members of more than one of the groups of memory cells, and at least one of the groups of memory cells comprises a memory cell having the particular intended data state and a memory cell having a different intended data state.