Memory Cell Group Wear Leveling via Dynamic Address Translation
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Solution Overview
Problem
Non-volatile memory devices experience uneven wear and reduced lifespan due to intensive write and erase operations, leading to performance degradation and potential loss of data storage capability in specific memory locations.
Innovation Solution
A memory system employing a novel wear leveling method that divides data storage space into segments, rotates data storage segments, and uses an address translator to map logical addresses to physical addresses, shifting less-used segments to more-used areas to distribute usage evenly and detect 'hot' data for re-mapping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If write and erase operations are intensively performed in a particular portion of a memory device, then data access speed is improved, but the memory cells in that portion wear down faster and may lose data storage capability
Solution Approach 1:
The memory device is divided into multiple memory blocks, and each memory block is further divided into multiple memory cell groups. This segmentation allows the system to distribute write and erase operations across different cell groups, preventing any single portion from being overused while maintaining fast access to frequently used data through strategic selection of active cell groups.
Solution Approach 2:
The system dynamically switches between different memory cell groups based on wear levels and access patterns. The controller monitors the state of each cell group and actively manages which groups are currently in use, creating a dynamic allocation strategy that adapts to changing conditions and extends overall device lifespan while maintaining performance.
2Duration of action of stationary object
If the entire memory device is used uniformly for all data storage, then lifespan is extended through even wear distribution, but data access efficiency decreases due to lack of optimization for frequently accessed data
Solution Approach 1:
Different memory cell groups are assigned different roles based on their wear status and access patterns. Some groups are designated as active storage regions for frequently accessed data, while others serve as standby or recovery regions. This local differentiation allows the system to optimize access efficiency for hot data while systematically managing wear across the entire device to extend lifespan.
Solution Approach 2:
The system performs preliminary wear-leveling actions by proactively switching between memory cell groups before any single group becomes fully worn. The controller monitors usage patterns and pre-emptively relocates data to less-worn groups, preventing localized wear from reaching critical levels and maintaining data access efficiency throughout the device's operational life.
3Duration of action of stationary object
If memory cell groups are switched frequently to distribute wear evenly, then lifespan is extended, but system complexity and control overhead increase
Solution Approach 1:
The address translator and wear-leveling control functions are merged into a unified management system. The controller integrates address translation with wear monitoring and cell group switching logic, allowing it to make coordinated decisions about data placement that simultaneously optimize for both lifespan extension and access efficiency without requiring separate complex control mechanisms.
Solution Approach 2:
The memory system implements self-service wear management through automated monitoring and switching of memory cell groups. The controller autonomously tracks usage patterns, identifies worn groups, and performs data relocation without external intervention, reducing the complexity of manual management while extending device lifespan through consistent wear distribution.
Data Source
AI summary
A memory system includes a memory device including a memory block, the memory block including a plurality of memory cell groups, an address translator that maps a logical address of a data to a physical address of the memory block, and a controller configured to divide the plurality of memory cell groups into a plurality of first memory cell groups and at least one second memory cell group, and control the address translator so that the address translator maps a logical address of a data to a physical address of the first memory cell groups of the memory block and not in the at least one second memory cell group and switches the at least one second memory cell group with a selected first memory cell group among the plurality of the first memory cell groups when a predetermined period of time elapses.