Semiconductor Memory Cell Layout With Asymmetric Isolation Spacing
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Solution Overview
Problem
The increasing integration density of semiconductor devices leads to deteriorated electrical and reliability characteristics, necessitating improvements in these areas.
Innovation Solution
A semiconductor memory device design featuring active patterns with different widths and slopes, along with specific spacing and alignment of device isolation patterns and word lines, enhances electrical and reliability characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If integration density is increased, then device functionality is enhanced, but electrical and reliability characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating asymmetric device isolation patterns with different widths on opposite sides of the active pattern. This local variation in isolation structure provides differentiated electrical characteristics and stress distribution in different regions, improving overall device reliability while maintaining high integration density
Solution Approach 2:
The patent implements asymmetry by designing device isolation patterns where the first device isolation pattern has a different width than the second device isolation pattern. This asymmetric configuration creates non-uniform stress distribution and improved electrical characteristics, resolving the contradiction between high integration density and device reliability
2Productivity
If integration density is increased, then device functionality is enhanced, but electrical characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating asymmetric device isolation patterns with different widths on opposite sides of the active pattern. This local variation in isolation structure provides differentiated electrical characteristics and stress distribution in different regions, improving overall device reliability while maintaining high integration density
Solution Approach 2:
The patent changes the width parameter of device isolation patterns to create asymmetric structures. By varying the isolation pattern widths, the electrical characteristics and stress distribution are optimized, improving electrical performance while maintaining high integration density
Data Source
AI summary
A semiconductor memory device may include a substrate, a first device isolation pattern and a second device isolation pattern having different widths from each other in a first direction, a first active pattern between the first device isolation pattern and the second device isolation pattern, and a word line that extends in the first direction and is on the first active pattern, where a first line that extends in a second direction and intersects an uppermost portion of the first active pattern, where the first line is spaced apart from the first device isolation pattern in the first direction by a first distance, where the first line is spaced apart from the second device isolation pattern in the first direction by a second distance, and where the first distance is less than the second distance.