3D Memory Channel Halogen Doping for Interface Defect Healing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration and operational reliability of semiconductor devices are limited by defects in the interfaces between memory and channel layers, which affect the stability and performance of three-dimensional semiconductor devices.
Innovation Solution
Incorporating a halogen element into the channel, memory, and insulating core layers, with varying concentrations at interfaces to heal defects and improve layer quality, and using a method that involves alternately stacking material layers, forming openings, and diffusing the halogen element through protective and diffusion barriers to enhance the semiconductor device structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If memory cells are stacked in three-dimensional structure to improve integration, then the degree of integration is improved, but interface defects between layers increase
Solution Approach 1:
The patent applies local quality by introducing halogen elements specifically at the interfaces between memory and channel layers, rather than uniformly throughout the structure. This targeted approach addresses interface defects locally while maintaining the overall three-dimensional stacked architecture for high integration.
Solution Approach 2:
The patent uses composite materials by combining halogen elements with the semiconductor layer structure. The halogen-containing compounds are integrated into the memory and channel layers to create a composite structure that heals interface defects while preserving the functional properties of the original materials.
2Reliability
If halogen element concentration is increased at interfaces to heal defects, then interface quality is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming halogen-containing compound layers before completing the stack structure. This allows the halogen elements to be positioned at interfaces during the manufacturing process rather than requiring post-processing steps, simplifying the overall manufacturing complexity.
Solution Approach 2:
The patent uses halogen-containing compounds as intermediary materials that facilitate the healing of interface defects. These compounds act as mediators between the manufacturing process and the final device structure, enabling defect reduction without requiring complex direct modification of the interface.
3Reliability
If halogen element is diffused through protective and diffusion barrier layers, then defect healing is achieved, but processing time increases
Solution Approach 1:
The patent applies parameter changes by controlling the diffusion conditions of halogen elements, including temperature, time, and concentration gradients. By optimizing these parameters, the diffusion process achieves effective defect healing while minimizing processing time through precise control of the diffusion rate and extent.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The halogen element effectively heals defects and improves the reliability and stability of semiconductor devices by reducing trap sites and grain boundary defects, leading to enhanced performance and integration capabilities.
Implementation Method 1
diffusing the halogen element into at least one of the memory layer and the channel layer from the passivation layer
Implementation Method 2
diffusing a halogen element into the channel layer through the protective layer and the diffusion barrier
Data Source
AI summary
A semiconductor device includes a gate structure including insulating layers and conductive layers that are alternately stacked, a channel layer located in the gate structure, a silicide layer located in the channel layer, and a memory layer surrounding the channel layer. At least one of the channel layer, the silicide layer, and the memory layer includes a halogen element.