Memory Device Channel Initialization During Pass Voltage Maintenance
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Solution Overview
Problem
Existing memory device programming operations are prolonged due to the pass voltage maintenance period, which delays the channel initialization operation, thereby increasing overall program time.
Innovation Solution
The memory device initiates the channel initialization operation simultaneously with or during the pass voltage maintenance period, applying specific voltages to the word lines, drain select lines, and source select lines to reduce program operation time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the channel initialization operation is performed after the pass voltage maintenance period, then the verification can be performed with stable pass voltage, but the program operation time is prolonged
Solution Approach 1:
The channel initialization operation is performed in advance during the pass voltage maintenance period rather than waiting for it to complete. By initializing the channel while the pass voltage is being maintained, the patent overlaps two operations that would traditionally be sequential, thereby reducing the total program operation time without compromising verification stability
Solution Approach 2:
The patent maintains continuous useful action by performing channel initialization during the pass voltage maintenance period. Instead of having idle time between pass voltage maintenance and channel initialization, the system continuously performs useful operations, eliminating unnecessary delays and reducing overall program time
2Measurement precision
If the pass voltage maintenance period is extended to ensure stable verification, then verification accuracy is improved, but program operation time increases
Solution Approach 1:
The channel initialization is performed preliminarily during the pass voltage maintenance period, ensuring that the channel is ready for verification before the verification phase begins. This preliminary action allows verification to proceed with stable conditions without requiring an extended maintenance period
Data Source
AI summary
A memory device includes drain select lines, source select lines, a plurality of word lines arranged between the drain select lines and the source select lines, and a peripheral circuit configured to perform a program operation on selected memory cells connected to a selected word line among the plurality of word lines. The peripheral circuit includes a voltage generator configured to generate a voltage for initializing a channel of a plurality of memory cells respectively connected to the plurality of word lines in a program phase among a plurality of phases included in the program operation.