Vertical Memory Channel Structure for Low-Heat Crystallization
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Solution Overview
Problem
The increasing number of stacks of insulation and sacrificial patterns for forming gate electrodes in semiconductor devices with high-capacity data storage requires significant heat to crystallize the channel, which can deteriorate the electrical characteristics of adjacent structures.
Innovation Solution
Incorporating a first filling pattern with a thermal conductivity of at least 100 W/m·K in the vertical memory channel structure, allowing crystallization of the channel with a small amount of heat, thereby preserving the electrical characteristics of adjacent structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of stacks of insulation patterns and sacrificial patterns is increased to achieve high-capacity data storage, then the storage capacity is improved, but a large amount of heat is required to crystallize the channel which can deteriorate the electrical characteristics of adjacent structures
Solution Approach 1:
The patent applies local quality by using a filling pattern with high thermal conductivity (at least 100 W/m·K) specifically in the region where the channel is formed, while other parts of the device can use materials with different properties. This localized high thermal conductivity region enables efficient heat transfer to the channel for crystallization without requiring excessive heat that would damage adjacent structures.
Solution Approach 2:
The filling pattern acts as an intermediary between the heat source and the channel structure. By using a material with high thermal conductivity, it efficiently mediates the heat transfer process, conducting heat from the external source to the channel region where it is needed for crystallization, thereby reducing the overall heat exposure required and protecting adjacent structures from thermal damage.
2Stability of the object's composition
If a large amount of heat is applied to crystallize the channel in devices with increased stacks, then the channel crystallization is achieved, but the electrical characteristics of adjacent structures deteriorate
Solution Approach 1:
The filling pattern creates a localized high thermal conductivity region that concentrates heat delivery precisely where needed for channel crystallization. This ensures reliable channel formation while limiting heat exposure to surrounding areas, thereby maintaining the electrical characteristics of adjacent structures.
Solution Approach 2:
The patent changes the thermal conductivity parameter of the filling material to at least 100 W/m·K, which fundamentally alters the heat distribution characteristics. This parameter change enables efficient heat transfer for channel crystallization while reducing the total heat input required, thus protecting adjacent structures from thermal damage.
3Use of energy by moving object
If the thermal conductivity of the filling pattern is increased to at least 100 W/m·K, then the channel can be crystallized with minimal heat exposure, but the selection of filling materials becomes more restricted
Solution Approach 1:
The patent specifies a minimum thermal conductivity parameter of 100 W/m·K for the filling pattern material. This parameter change enables highly efficient heat transfer for channel crystallization with minimal heat exposure, while the patent acknowledges that materials meeting this criterion include diamond, cubic boron nitride, and amorphous carbon, providing several viable options for implementation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a high-thermal conductivity material in the filling pattern enables efficient crystallization of the channel with minimal heat exposure, maintaining the integrity of adjacent electrical structures.
Implementation Method 1
The first filling pattern may include a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.
Data Source
AI summary
A semiconductor device includes gate electrodes on a substrate and a memory channel structure extending through the gate electrodes. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The memory channel structure extends in the vertical direction on the substrate. The memory channel structure includes a first filling pattern extending in the vertical direction, a channel on a sidewall of the first filling pattern, and a charge storage structure on a sidewall of the channel. The first filling pattern includes a material having a thermal conductivity equal to or more than about 100 W/m·K at a temperature of about 25° C.