3D Memory Channel Voltage Control for Program Disturb
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Solution Overview
Problem
Three-dimensional memory devices experience significant program disturb during operations, leading to data reliability issues due to voltage fluctuations across cell strings.
Innovation Solution
The memory device employs a control circuit to manage voltages applied to cell strings, maintaining or increasing channel voltages based on pre-set conditions to minimize program disturb, using a method that adjusts voltages during programming operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If voltage is applied to program selected memory cells in three-dimensional memory devices, then programming operation is achieved, but program disturb occurs in non-selected cell strings due to voltage fluctuations
Solution Approach 1:
The patent applies preliminary anti-action by increasing the channel voltage of non-selected cell strings before and during the programming operation of selected memory cells. This preemptive voltage adjustment counteracts the voltage fluctuations that would otherwise cause program disturb in non-selected cell strings, thereby protecting data reliability without compromising the programming operation
Solution Approach 2:
The patent changes the voltage parameter dynamically during the programming operation. Specifically, it adjusts the channel voltage of non-selected cell strings based on the programming status of selected memory cells, using verify results to determine whether to maintain or increase the channel voltage, thus adapting to different operational stages to minimize program disturb
2Reliability
If channel voltage of non-selected cell strings is increased during programming, then program disturb is reduced, but voltage management complexity increases
Solution Approach 1:
The patent implements feedback control by using verify operation results to dynamically adjust the channel voltage of non-selected cell strings. The control circuit monitors the programming status of selected memory cells through verify operations and adjusts the channel voltage accordingly, creating a closed-loop system that automates voltage management and reduces manual intervention complexity
Data Source
AI summary
Disclosed are a memory device, including: a memory block including a plurality of cell strings; a peripheral circuit configured to set voltages for a program operation of selected memory cells in the cell strings, and program the selected memory cells by using the set voltages; and a control circuit configured to control the peripheral circuit so that the selected memory cells are programmed in response to a program command, and increase a channel voltage of non-selected cell strings including non-selected memory cells while the selected memory cells are programmed, and an operating method thereof.