Memory Device Channel Voltage Drop Prevention
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Solution Overview
Problem
Existing memory devices face challenges in preventing channel voltage drop during program operations, which can lead to disturbances and reduced reliability in data storage.
Innovation Solution
A method and memory device configuration that includes applying a pass voltage to a selected word line and a turn-on voltage to a source select line during a program operation, along with a channel precharge operation to maintain the channel voltage and prevent drops, thereby minimizing disturbances and enhancing data storage reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a program operation is performed on memory cell strings, then data is written to the memory, but channel voltage drops causing disturbances and reduced reliability
Solution Approach 1:
The patent applies preliminary anti-action by performing a channel precharge operation before the program operation. This precharge operation raises the channel voltage to a higher potential state in advance, creating a voltage buffer that prevents the channel voltage from dropping during the subsequent program operation, thus counteracting the harmful voltage drop effect before it can occur
Solution Approach 2:
The patent implements preliminary action by executing the channel precharge operation prior to the program operation. The precharge operation prepares the memory cell strings by elevating the channel voltage, ensuring that when the program operation begins, the channel is already in an optimized voltage state that prevents disturbances and maintains reliability
2Productivity
If conventional program operation is used, then writing speed is maintained, but channel voltage disturbances occur
Solution Approach 1:
The patent applies preliminary action by performing the channel precharge operation before the program operation. This prepares the memory cell strings in advance by raising the channel voltage, ensuring stable voltage conditions during the program operation without compromising the writing speed
3Stability of the object's composition
If channel precharge operation is applied, then channel voltage stability is improved, but operation time increases
Solution Approach 1:
The patent implements periodic action by applying the turn-on voltage to the source select line only during a specific portion of the program operation period, rather than continuously. This time-limited application of voltage maintains channel stability when needed while minimizing the overall time penalty of the precharge operation
Data Source
AI summary
A memory device includes a plurality of memory cell strings, a peripheral circuit, and control logic. The plurality of memory cell strings are connected between a bit line and a common source line. The peripheral circuit is configured to perform a channel precharge operation and a program operation for the plurality of memory cell strings. The control logic is configured to control the peripheral circuit to apply a pass voltage to a selected word line among a plurality of word lines connected to the plurality of memory cell strings and to apply a turn-on voltage to a source select line connected to the plurality of memory cell strings, during a portion of a period in which the pass voltage is applied to the selected word line, in the program operation.