Semiconductor Memory Circuit Timing Adjustment for High-Frequency Stability
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Solution Overview
Problem
Semiconductor memory circuits face challenges in maintaining stable performance and securing timing margins during high-speed operations, which are essential for modern electronic devices like mobile phones and computers.
Innovation Solution
A semiconductor memory circuit design that includes a command decoder, data path activation unit, memory block, output latch unit, and output timing adjustment unit, which generates data output enable signals based on adjusted timing to synchronize with an external strobe signal, ensuring stable data transmission even at high frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the semiconductor memory circuit operates at higher frequencies to meet high-speed operation requirements, then the operation speed is improved, but the timing margin becomes insufficient and performance stability deteriorates
Solution Approach 1:
The output timing adjustment unit performs preliminary timing adjustment on the read command before data output, advancing the timing preparation in advance. This allows the circuit to operate at higher frequencies by pre-synchronizing commands with the strobe signal, preventing timing margin insufficiency that would otherwise occur at high-speed operation.
Solution Approach 2:
The output timing adjustment unit generates data output enable signals that copy and synchronize with the external strobe signal timing. By creating these synchronized enable signals based on the adjusted read command timing, the circuit maintains reliable data transmission even at higher operating frequencies where traditional timing would fail.
2Productivity
If the semiconductor memory circuit operates at higher frequencies, then the data processing speed is improved, but the timing margin in data transfer process becomes insufficient
Solution Approach 1:
The output timing adjustment unit performs preliminary timing adjustment on the read command before data output, advancing the timing preparation in advance. This allows the circuit to operate at higher frequencies by pre-synchronizing commands with the strobe signal, preventing timing margin insufficiency that would otherwise occur at high-speed operation.
Solution Approach 2:
The circuit dynamically adjusts the timing of the read command based on the external strobe signal characteristics. The output timing adjustment unit modifies command timing in real-time to match strobe signal variations, maintaining adequate timing margins even as operating frequency increases and timing requirements become more stringent.
3Speed
If the semiconductor memory circuit operates at higher frequencies, then the operation speed is improved, but the noise in strobe signal and clock signal becomes more significant
Solution Approach 1:
The output timing adjustment unit generates data output enable signals that copy and synchronize with the external strobe signal timing. By creating these synchronized enable signals based on the adjusted read command timing, the circuit maintains reliable data transmission even at higher operating frequencies where traditional timing would fail.
Solution Approach 2:
The output timing adjustment unit uses the external strobe signal as a reference to adjust command timing, creating a feedback mechanism that compensates for noise and timing variations. This feedback approach allows the circuit to maintain stable operation at high frequencies by continuously synchronizing with the actual strobe signal characteristics despite noise interference.
Data Source
AI summary
The present invention relates to a semiconductor memory circuit enabling stable data transmission in a high frequency operation and a data processing system using the same. The data processing system includes a semiconductor memory circuit configured to output data, corresponding to a read command, in response to an external strobe signal, and a controller configured to provide the semiconductor memory circuit with the read command and the strobe signal related to the read command.