Memory Circuit with Temperature-Dependent Read/Write Voltage Switching

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Solution Overview

Problem

Existing memory devices face high power consumption and reliability issues due to the need for maintaining word lines at high voltage levels, which affects the integrity of metal-oxide-semiconductor field-effect transistors (MOSFETs) and increases time-dependent dielectric breakdown (TDDB) risk.

Innovation Solution

A temperature coefficient modulation (TCM) circuit that switches between positive and negative temperature coefficients for output voltages during read and write operations, respectively, optimizing power management and reducing voltage stress on word lines.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If word lines are maintained at high voltage levels for memory operations, then memory access reliability is improved, but power consumption increases and MOSFET reliability deteriorates due to TDDB effects

Engineering Contradiction:

Improvememory access reliabilityVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent implements dynamic voltage adjustment by switching between a first voltage level during read operations and a second voltage level during write operations. The voltage level is dynamically changed based on the operation type, avoiding continuous high voltage application and thereby reducing power consumption and TDDB effects while maintaining reliable memory access.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent changes the voltage parameter based on operation mode. During read operations, a first voltage level is applied to ensure reliable data reading, while during write operations, a second voltage level is applied to ensure reliable data writing. This parameter change optimizes both power consumption and reliability for different operation types.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If word lines are maintained at high voltage levels, then memory operation reliability is improved, but MOSFET integrity deteriorates due to time-dependent dielectric breakdown

Engineering Contradiction:

Improvememory operation reliabilityVSAvoidTDDB effects on MOSFETs

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent dynamically adjusts the voltage level applied to word lines based on the operation type. By switching between a first voltage level for reads and a second voltage level for writes, the patent minimizes the duration and magnitude of high voltage stress on MOSFETs, thereby reducing TDDB effects while maintaining operation reliability.

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The patent employs periodic switching between different voltage levels according to read and write operation cycles. This periodic action ensures that high voltage is applied only when necessary for write operations, while read operations use lower voltage, thereby periodically reducing the cumulative TDDB stress on MOSFETs.

Inventive Principle:

Principle #19Periodic action

3Reliability

If high voltage levels are applied to word lines, then write operation reliability is improved, but power consumption increases

Engineering Contradiction:

Improvewrite operation reliabilityVSAvoidpower consumption

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent implements dynamic voltage switching where a second voltage level is applied during write operations to ensure reliable data writing, and a first voltage level is applied during read operations to reduce power consumption. This dynamic adjustment ensures high voltage is used only when necessary for writes, optimizing the trade-off between write reliability and power consumption.

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances memory efficiency by minimizing power consumption and reducing voltage stress on MOSFETs, thereby improving reliability and reducing TDDB effects.

Implementation Method 1

A temperature coefficient modulation (TCM) circuit that switches between positive and negative temperature coefficients for output voltages during read and write operations, respectively

Methodology Applied

Scientific EffectTemperature coefficient modulation:

Data Source

PatentUS12376313B2Circuit and method to enhance efficiency of memory

Publication Date: 2025.07.29 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes: providing a modulation circuit and a driving circuit, the modulation circuit configured to generate a temperature-dependent voltage and provide the same to the driving circuit; determined an operation mode of a memory array; providing a first current corresponding to a positive temperature coefficient by the driving circuit in response to the operation mode being a read operation on the memory array; and providing a second current corresponding to a negative temperature coefficient by the driving circuit in response to the operation mode being a write operation on the memory array.