Memory Device Programming via Code Count Mapping Rules
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Solution Overview
Problem
Incremental step pulse programming (ISPP) in memory devices often causes program disturbance, especially in 'slow cells' that require more program pulses, leading to inefficiencies and increased bit error rates.
Innovation Solution
An operation method for memory devices that involves generating mapping rules based on code counts to assign verifying voltage levels, allowing for controlled programming that reduces program disturbance and bit error rates by optimizing the programming process for multi-level-cell (MLC) and triple-level-cell (TLC) memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If incremental step pulse programming (ISPP) is used to program memory cells, then programming capability is improved, but program disturbance increases especially in slow cells
Solution Approach 1:
The patent changes the programming parameters by introducing code counting and mapping rules that assign different verifying voltage levels to different codes. This parameter change allows the system to adapt the programming process to the specific characteristics of each memory cell, reducing program disturbance in slow cells while maintaining programming capability.
Solution Approach 2:
The patent implements feedback by counting the number of codes and using this information to generate mapping rules. The feedback loop involves counting codes, generating mapping rules based on the counts, and then using these rules to guide the programming process, thereby reducing program disturbance.
2Device complexity
If traditional programming methods are used, then programming process is simple, but bit error rate increases
Solution Approach 1:
The patent applies preliminary action by counting the number of codes before programming and generating mapping rules in advance. This preliminary processing allows the system to prepare optimized programming parameters before the actual programming occurs, reducing bit error rates without significantly increasing operational complexity.
3Object-affected harmful factors
If code counting and mapping rule generation are implemented, then program disturbance is reduced, but processing time increases
Solution Approach 1:
The patent performs code counting and mapping rule generation as preliminary actions before the actual programming process. By preparing the mapping rules in advance based on code counts, the system reduces program disturbance while the time cost is confined to the preliminary phase rather than extending the overall programming duration.
Data Source
AI summary
Operation methods for a memory device is provided. An operation method for the memory device comprises programming the memory device as described in follows. Data are provided. The data comprise a plurality of codes. Each number of the codes is counted. Then, a mapping rule is generated according to each number of the codes. In the mapping rule, each of the codes is mapped to one of a plurality of verifying voltage levels which are sequentially arranged from low to high. After that, the data are programmed into the memory device according to the mapping rule.