Memory Column Address Controller Clock Synchronization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Memory devices face issues with generating accurate column addresses, leading to abnormal address generation and potential operational errors due to the complexity of address signal processing.
Innovation Solution
A memory device with a column address controller that generates column addresses based on input address signals, using a control logic to manage and process address signals, preventing reset issues by enabling column address generation only during specific cycles of the reference clock.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If column address generation is continuously enabled, then address processing speed is improved, but abnormal column addresses may be generated causing operational errors
Solution Approach 1:
The column address control signal is enabled only during specific cycles of the reference clock (when the clock signal is in a high state), rather than continuously. This periodic enabling ensures that column address generation occurs at appropriate timing intervals, preventing abnormal address generation while maintaining processing efficiency.
2Duration of action of stationary object
If column address control signal is always active, then memory operation continuity is improved, but reset issues and abnormal addresses occur
Solution Approach 1:
The column address control signal is synchronized with the reference clock signal, being enabled only during specific high states of the clock. This periodic activation maintains memory operation continuity while preventing reset issues by ensuring the control signal is active only at appropriate timing moments.
Solution Approach 2:
The column address control signal generation is tied to the reference clock signal state, creating a feedback mechanism where the control signal is automatically enabled or disabled based on the clock signal's high or low state. This ensures stable address signal generation synchronized with the memory device's operating rhythm.
Data Source
AI summary
A memory device prevents generation of an abnormal column address. The memory device includes: a memory cell array; and a column address controller configured to generate a column address of the memory cell array in response to a column address control signal, wherein the column address controller enables the column address control signal when an address signal is input, and wherein the address signal includes a column address signal corresponding to the column address.


