Memory Command Timing for Predictive Voltage Droop Mitigation

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Solution Overview

Problem

Memory devices experience sub-optimal performance due to voltage droop, undesirable oscillating patterns, and resonance frequencies caused by mismatched power delivery networks, leading to increased latency and reliability issues.

Innovation Solution

Implement predictive power management by monitoring voltage responses and adjusting command timing to mitigate voltage droop and resonance frequencies through impedance profiling and frequency analysis, using on-die monitoring components to identify and adjust command sequences.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the power delivery network operates close to or outside of acceptable ranges, then the memory device may perform sub-optimally with increased latency, but the system complexity increases due to the need for predictive power management

Engineering Contradiction:
Improvememory device performanceVSAvoidpower management complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by proactively identifying voltage droop conditions and adjusting command timing before performance degradation occurs. The memory device monitors voltage responses to command sequences, identifies patterns that lead to voltage droop, and preemptively modifies timing parameters to prevent the harmful effect, thereby maintaining optimal performance without requiring complex real-time intervention systems.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback mechanisms by monitoring voltage responses to command sequences and using this information to adjust future command timing. The system continuously observes the relationship between command patterns and voltage droop events, then modifies command sequencing based on this feedback to prevent voltage instability, creating a closed-loop control system that adapts to actual operating conditions.

Inventive Principle:
Principle #23Feedback

2Reliability

If command timing is adjusted to mitigate voltage droop, then reliability improves, but latency increases due to timing adjustments

Engineering Contradiction:
Improvememory operation reliabilityVSAvoidcommand execution latency
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies parameter changes by dynamically adjusting command timing parameters based on identified voltage droop patterns. Rather than using fixed conservative timing, the system modifies timing parameters adaptively - increasing spacing only when and where voltage droop is predicted, and maintaining aggressive timing elsewhere. This selective parameter adjustment improves reliability while minimizing overall latency impact.

Inventive Principle:
Principle #35Parameter changes

3Stability of the object's composition

If impedance profiling and frequency analysis are implemented, then voltage oscillations are prevented, but device complexity increases

Engineering Contradiction:
Improvevoltage stabilityVSAvoidmonitoring and analysis complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

The patent applies self-service by implementing monitoring and analysis functions directly within the memory device itself. The memory device autonomously performs impedance profiling and frequency analysis on its own power delivery network, identifying resonant frequencies and voltage oscillation patterns without requiring external control logic. This self-contained approach improves voltage stability while avoiding the complexity of external monitoring systems.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS12468370B2Predictive power management
Publication Date: 2025.11.11 MICRON TECHNOLOGY INC
  • US12468370B2 patent drawing
  • US12468370B2 patent drawing
  • US12468370B2 patent drawing

AI summary

Methods, systems, and devices for predictive power management are described. Correlations may be identified between a set of commands performed at the memory device and oscillating voltage patterns, or a resonance frequency, or both. Voltages may be monitored by the memory device and be compared to the identified voltage pattern to mitigate undesirable oscillating voltages and resonance frequency.