3D Memory Contact Electrode Layout for Higher Integration
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor storage devices face challenges in achieving high integration of memory structures while maintaining efficient connectivity and structural integrity.
Innovation Solution
The semiconductor storage device employs a substrate with memory regions and hook-up regions arranged in specific directions, featuring conductive layers, semiconductor layers, and contact electrodes with varying lengths to facilitate efficient electrical connections and enhance integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If contact electrodes of uniform length are used in the hook-up region, then manufacturing process is simpler, but connectivity efficiency and integration density are reduced
Solution Approach 1:
The patent applies local quality by varying the length of contact electrodes based on their specific position and function within the hook-up region. Contact electrodes are configured with different lengths to optimize electrical connectivity to different conductive layers, with longer electrodes reaching deeper layers and shorter electrodes serving upper layers. This localized differentiation improves integration density and connectivity efficiency without requiring complete redesign of the entire electrode system.
2Quantity of substance
If multiple conductive layers are stacked to increase memory capacity, then storage density is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent segments the memory structure into multiple independently formable conductive layers stacked in the vertical direction. Each conductive layer can be processed and positioned with controlled precision, and the varying lengths of contact electrodes provide tolerance accommodation for alignment variations between layers. This segmentation approach enables high memory capacity through stacking while managing manufacturing precision requirements through modular layer construction.
3Ease of operation
If contact electrodes extend to different depths to connect multiple conductive layers, then connectivity efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent implements preliminary action by pre-configuring contact electrodes with different lengths during the fabrication process to match the planned stacking arrangement of conductive layers. The varying electrode lengths are established in advance to correspond with the positions of different conductive layers, enabling efficient electrical connectivity without requiring complex post-fabrication adjustments or reconfiguration.
Data Source
AI summary
A semiconductor storage device includes a substrate having a memory region and a hook-up region arranged in a first direction and a plurality of memory structures arranged in a second direction intersecting the first direction. The plurality of memory structures include a plurality of conductive layers arranged in a third direction intersecting a surface of the substrate and extending in the first direction over the memory region and the hook-up region and a plurality of contact electrodes provided in the hook-up region and extending in the third direction to have an outer peripheral surface surrounded by a part of the plurality of conductive layers, each contact electrode being connected to any of the plurality of conductive layers. The hook-up region includes a first area and a second area arranged in the first direction. The first region includes a first contact electrode and a second contact electrode, and the second region includes a third contact electrode. A length of the third contact electrode in the third direction is larger than a length of the first contact electrode in the third direction, and is smaller than a length of the second contact electrode in the third direction.