3D Memory Contact Structure for Nanoscale Fabrication Stability
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Solution Overview
Problem
Structural damage during fabrication of memory devices, particularly at nanometer scales, leads to yield, cost, and reliability issues.
Innovation Solution
The introduction of conductive contacts and support pillars in the memory device structure, which are located between blocks and adjacent to conductive contacts, enhances the structural integrity and performance of memory devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dimensions of memory device structures are reduced to nanometer scale, then integration density and performance are improved, but structural damage and collapse occur during fabrication
Solution Approach 1:
The patent introduces sacrificial structures (such as sacrificial pillars or beams) that are formed beforehand to provide mechanical support to fragile nanoscale structures during fabrication. These sacrificial structures are removed after serving their protective function, allowing the underlying structure to be formed without direct mechanical stress. This preliminary support action prevents structural collapse during manufacturing while enabling nanometer-scale dimensions for high integration density.
Solution Approach 2:
The patent employs intermediary materials or structures (such as sacrificial dielectric materials or temporary support structures) that mediate between the fabrication process and the fragile nanoscale memory structures. These intermediaries absorb mechanical stresses and prevent direct damage to the nanoscale components during fabrication, allowing the structures to be formed at nanometer dimensions without collapsing.
2Reliability
If support structures are added to prevent structural damage, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent employs sacrificial structures that are intentionally designed to be temporary and removable. These structures (such as sacrificial pillars or beams made from removable dielectric materials) are added to provide mechanical support during fabrication, then deliberately removed after serving their protective function. This approach improves reliability during manufacturing without permanently increasing device complexity, as the sacrificial structures do not remain in the final device.
Solution Approach 2:
The patent divides the support function into separate, modular sacrificial structures that can be independently formed and removed. Rather than creating a complex permanent support system, the structure is segmented into discrete sacrificial elements that provide localized support where needed during fabrication, then are removed to leave the final device without permanent structural additions.
3Manufacturing precision
If sacrificial structures are removed after fabrication, then manufacturing precision is improved, but additional fabrication steps are required
Solution Approach 1:
The patent uses sacrificial structures made from materials that are easily removed through standard fabrication processes. These sacrificial structures are designed to be removable without requiring complex or specialized removal steps, allowing them to be discarded after providing temporary mechanical support during critical fabrication stages. This enables high manufacturing precision for nanoscale structures while keeping the additional fabrication steps manageable.
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory device, which includes: a first region including first levels of conductive materials interleaved with first levels of dielectric materials, and first memory cells including pillars extending through at least a portion of the first levels of conductive materials and first levels of dielectric materials; a second region including second levels of conductive materials interleaved with second levels of dielectric materials, and second memory cells including pillars extending through at least a portion of the first levels of conductive materials and first levels of dielectric materials; a third region including a dielectric structure separating the first levels of conductive materials from the second levels of conductive materials; and a conductive contact extending through at least a portion of the third region and contacting a conductive material of the first levels of conductive materials.