Semiconductor Memory Contact Line Slits to Suppress Chip Cracking

Solution Overview

Problem

Conventional semiconductor memory devices face challenges in improving yield due to void formation in contact lines during the filling process, which can lead to cracking and reduced chip reliability.

Innovation Solution

The semiconductor memory device incorporates slits with varying widths, including normal and wide portions, to create seams during the filling process, discontinuously forming voids and enhancing the deflective strength of contact lines, thereby reducing the likelihood of chip cracking.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If contact lines are continuously formed during the filling process, then manufacturing simplicity is maintained, but void formation occurs leading to chip cracking and reduced yield

Engineering Contradiction:

Improvechip cracking resistanceVSAvoidslit structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The contact line is segmented into multiple sections by introducing slits with different widths. The slit structure divides the continuous contact line into discrete segments, allowing voids to form discontinuously between the segments rather than continuously along the entire contact line. This segmentation prevents crack propagation while maintaining overall structural integrity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The slit structure implements local quality variations by having different slit widths at different positions. Normal portions have standard width while wide portions have increased width, creating localized differences in void formation characteristics. This local variation allows specific regions to accommodate voids without compromising the overall strength of the contact line.

Inventive Principle:

Principle #3Local quality

2Strength

If uniform slit width is used, then manufacturing process is simplified, but voids form continuously causing reduced chip strength

Engineering Contradiction:

Improvecontact line deflective strengthVSAvoidslit width variation control

Core Design Contradiction:

StrengthVSManufacturing precision

Solution Approach 1:

The contact line is segmented into multiple sections by introducing slits with different widths. The slit structure divides the continuous contact line into discrete segments, allowing voids to form discontinuously between the segments rather than continuously along the entire contact line. This segmentation prevents crack propagation while maintaining overall structural integrity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The slit structure implements local quality variations by having different slit widths at different positions. Normal portions have standard width while wide portions have increased width, creating localized differences in void formation characteristics. This local variation allows specific regions to accommodate voids without compromising the overall strength of the contact line.

Inventive Principle:

Principle #3Local quality

3Productivity

If continuous voids form in contact lines, then filling process is simpler, but chip cracking occurs reducing yield

Engineering Contradiction:

Improveyield improvementVSAvoidslit width variation structure

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The contact line is segmented into multiple sections by introducing slits with different widths. The slit structure divides the continuous contact line into discrete segments, allowing voids to form discontinuously between the segments rather than continuously along the entire contact line. This segmentation prevents crack propagation while maintaining overall structural integrity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The slit structure implements local quality variations by having different slit widths at different positions. Normal portions have standard width while wide portions have increased width, creating localized differences in void formation characteristics. This local variation allows specific regions to accommodate voids without compromising the overall strength of the contact line.

Inventive Principle:

Principle #3Local quality

Data Source

PatentUS11895844B2Semiconductor memory device

Publication Date: 2024.02.06 KIOXIA CORP

AI summary

A semiconductor memory device according to an embodiment includes a substrate including block areas, members, conductive layers, and pillars. Each of the members is respectively disposed at a boundary portion between the block areas. At least one member of the members includes first portions and a second portion. The first portions are arranged in a first direction. The second portion is disposed between any two adjacent ones of the first portions. Either one of one of the first portions and the second portion of the member is referred to as a third portion. The other one of the one of the first portions and the second portion of the member is referred to as a fourth portion. The third portion has a width in a second direction greater than a width of the fourth portion in the second direction.