Semiconductor Memory Contact Plug Lateral Extension
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Solution Overview
Problem
Highly integrated semiconductor memory devices face reliability issues due to reduced widths and spaces of elements, leading to potential electrical shorts and increased manufacturing complexity.
Innovation Solution
The semiconductor memory device design includes a unique arrangement of contact plugs with vertically and horizontally extending portions, allowing for increased flexibility in data storage element placement and simplifying manufacturing processes by omitting additional pads, thereby reducing the risk of electrical shorts and improving process margins.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element widths and spaces are reduced to increase integration density, then integration density is improved, but reliability deteriorates due to increased risk of electrical shorts
Solution Approach 1:
The contact plug is extended from a simple vertical structure to include a horizontal portion that laterally connects to the data storage element. This dimensional extension allows the contact plug to reach the data storage element without requiring the vertical contact plug to be directly positioned underneath it, thereby increasing spacing between adjacent vertical contact plugs and reducing electrical short risk while maintaining high integration density
Solution Approach 2:
The contact plug is segmented into two distinct portions: a vertical portion that extends from the substrate surface and a horizontal portion that laterally connects to the data storage element. This segmentation allows each portion to perform its specific function independently, with the vertical portion providing substrate connection and the horizontal portion providing lateral connection to the data storage element, thereby improving reliability through increased spacing
2Reliability
If conventional pad structures are used for connecting data storage elements, then electrical connection is achieved, but device complexity increases and manufacturing becomes more difficult
Solution Approach 1:
The contact plug and pad structure are merged into a single integrated contact plug structure. The horizontal portion of the contact plug directly connects to the data storage element without requiring a separate pad structure, thereby simplifying the device structure and manufacturing process while maintaining reliable electrical connection
Solution Approach 2:
The contact plug serves multiple functions: it provides vertical connection to the substrate, lateral connection to the data storage element through its horizontal portion, and acts as the connection structure that would traditionally require separate pads. This multi-functionality eliminates the need for additional pad structures and simplifies the overall device architecture
3Ease of manufacture
If conventional vertical contact plug arrangement is used, then manufacturing is simple, but flexibility in data storage element arrangement is limited
Solution Approach 1:
The contact plug structure is made dynamic by extending it laterally in the horizontal direction. This dynamic extension allows the contact plug to adapt to different data storage element positions and arrangements, providing manufacturing flexibility while maintaining structural simplicity and ease of fabrication
Data Source
AI summary
A semiconductor memory device includes a first insulating layer covering a substrate, a first contact plug and a second contact plug each penetrating the first insulating layer, a first data storage element disposed on the first contact plug, and a second data storage element disposed on the second contact plug. The first contact plug includes a vertically extending portion and a horizontally extending portion arranged between the vertically extending portion and the first data storage element, and the second contact plug extends substantially vertically from a top surface of the substrate. The first data storage element is laterally spaced apart from the vertically extending portion when viewed in plan view. The first data storage element is disposed on the horizontally extending portion.