Memory Contact Via Structure With Stress Compensation Core

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Solution Overview

Problem

Conventional methods for forming memory devices with high aspect ratio contact vias face challenges in achieving adequate material deposition and alignment, leading to misalignment and stress mismatch, resulting in distortion such as bowing and warping due to high tensile stress and strength properties of conductive materials.

Innovation Solution

Incorporation of a stress compensation material with high compressive stress in the central portion of the contact via to balance the high tensile stress and strength of conductive materials, reducing distortion by using a conformal deposition process for multiple materials within the contact structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If conductive materials with high tensile stress and strength are used in contact vias, then the mechanical strength of the contact structure is improved, but distortion such as bowing and warping occurs due to stress mismatch

Engineering Contradiction:

Improvemechanical strength of contact structureVSAvoidalignment precision of contact via

Core Design Contradiction:

StrengthVSManufacturing precision

Solution Approach 1:

The patent introduces a stress compensation material with compressive stress properties to counterbalance the tensile stress of conductive materials. By changing the stress parameter (from purely tensile to a balanced combination of tensile and compressive), the patent achieves both mechanical strength and alignment precision without distortion

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent employs a composite structure within the contact via, combining conductive materials (with tensile stress) and stress compensation materials (with compressive stress). This composite approach allows the structure to achieve both strength and dimensional stability by balancing opposing stress forces

Inventive Principle:

Principle #40Composite materials

2Quantity of substance

If the aspect ratio of contact vias is increased to improve packing density, then the memory device capacity is improved, but adequate material deposition within the small openings becomes difficult

Engineering Contradiction:

Improvememory device capacityVSAvoidmaterial deposition process

Core Design Contradiction:

Quantity of substanceVSEase of manufacture

Solution Approach 1:

The patent applies different material properties to different regions within the contact via. The stress compensation material is specifically placed in the central portion of the via, while conductive materials line the walls. This local differentiation allows adequate deposition in high aspect ratio vias while maintaining structural integrity

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The stress compensation material acts as an intermediary substance that facilitates proper deposition and stress management in high aspect ratio contact vias. It provides a structural framework that enables subsequent conductive material deposition while compensating for stress that would otherwise cause distortion

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The stress compensation material effectively inhibits bowing and warping, improving the structural integrity and reliability of the contact structure by offsetting the tensile stress, thereby enhancing the performance and reliability of memory devices.

Implementation Method 1

Methodology Applied

Scientific EffectStress compensation:

Data Source

PatentUS20250336826A1Microelectronic devces and memory devices

Publication Date: 2025.10.30 LODESTAR LICENSING GROUP LLC

AI summary

An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.