Memory Control Circuit Unit Data Writing Method for NAND Flash
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Solution Overview
Problem
In NAND flash memory modules, as the number of bits stored per memory cell increases, the time required to identify storage states also increases, leading to inefficiencies in read commands and data retrieval.
Innovation Solution
A data writing method that classifies data into frequently-read and less frequently-read categories, programming frequently-read data into a first physical programming unit with faster read speeds, utilizing a memory control circuit unit to record characteristic parameters and manage data storage within physical erasing units.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of bits stored per memory cell increases (MLC/TLC), then storage capacity increases, but the time required to identify storage states increases
Solution Approach 1:
The patent segments physical programming units into different types (first physical programming units and second physical programming units) with different read speeds. Frequently read data is stored in faster first physical programming units, while less frequently read data is stored in second physical programming units. This segmentation allows the system to maintain high storage capacity while optimizing read performance for important data.
Solution Approach 2:
The patent applies local quality by assigning different storage characteristics to different physical programming units within the same memory structure. Specifically, certain physical programming units are optimized for fast reading (first physical programming units) while others are optimized for capacity (second physical programming units). This allows different regions of the storage medium to have different functional qualities based on data access patterns.
2Adaptability or versatility
If data is programmed into multiple physical programming units, then storage flexibility increases, but data retrieval efficiency decreases
Solution Approach 1:
The patent performs preliminary action by pre-classifying data into frequently read and less frequently read categories before storage. The memory control circuit identifies data access patterns and pre-determines which physical programming unit type should store which data. This preliminary classification ensures that when read operations occur, the data is already in the optimal location, eliminating the need for complex real-time search operations across multiple physical programming units.
Solution Approach 2:
The patent implements feedback mechanisms where the memory control circuit monitors data access patterns and uses this information to optimize data placement. The system continuously learns from read/write operations and adjusts the classification of data, ensuring that frequently accessed data is maintained in fast physical programming units. This feedback loop maintains high retrieval efficiency while preserving storage flexibility.
Data Source
AI summary
A data writing method for a rewritable non-volatile memory module is provided. The method includes recording a plurality of characteristic parameters corresponding to a plurality of data to be programmed; arranging the data according to the characteristic parameters and identifying frequently-read data among the plurality of data according to the characteristic parameters, and programming the frequently-read data into a first physical programming unit of a rewritable non-volatile memory module, wherein a time for reading data from the first physical programming unit is less than a time for reading data from a second physical programming unit of the rewritable non-volatile memory module. Accordingly, the reading performance for the data can be effectively improved.