Memory Control Circuit Unit Status Check for Rewritable Non-Volatile Memory

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Solution Overview

Problem

In rewritable non-volatile memory modules, data written to a physical page can inadvertently be written to other pages due to 'word line short,' leading to reduced data accuracy over time as these pages are repeatedly written.

Innovation Solution

A data writing method that checks the status of a physical programming unit before writing data, allowing the write operation only if the status meets a specific condition, thereby preventing repeated writing to the same unit and maintaining data accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If data is written to a physical page in rewritable non-volatile memory module, then the storage capacity is utilized, but data accuracy deteriorates due to repeated writing caused by word line short

Engineering Contradiction:
Improvestorage capacity utilizationVSAvoiddata accuracy
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The patent performs a preliminary status check on the physical programming unit before executing the write operation. The memory control circuit unit checks whether the physical programming unit is in an erased state using a read command before writing data. This preliminary action prevents inadvertent writing to already-programmed pages, thereby avoiding repeated writing and maintaining data accuracy while still utilizing storage capacity.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If status checking is performed before write operation, then data accuracy is maintained, but operation complexity increases

Engineering Contradiction:
Improvedata accuracyVSAvoidoperation complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements a feedback mechanism where the memory control circuit unit reads the status of the physical programming unit before writing and uses this feedback information to decide whether to proceed with the write operation. The system continuously monitors the state of memory pages and adjusts writing operations accordingly, preventing inadvertent writes while maintaining a relatively simple operational framework through standardized read-before-write sequences.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12307130B2Data writing method for avoiding repeated writing, memory storage device, and memory control circuit unit
Publication Date: 2025.05.20 PHISON ELECTRONICS
  • US12307130B2 patent drawing
  • US12307130B2 patent drawing
  • US12307130B2 patent drawing

AI summary

A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command from a host system, and the write command including first data; checking a status of a first physical programming unit in a first physical erasing unit; in response to the status of the first physical programming unit being a first status, sending a first command sequence to a rewritable non-volatile memory module, and the first command sequence being configured to instruct the rewritable non-volatile memory module to store at least part of the first data to the first physical programming unit.