Memory Control for Temperature-Triggered NAND Data Refresh
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The error rate of data read from rewritable non-volatile memory modules increases significantly due to large temperature differences during reading and writing, particularly in environments with drastic temperature changes.
Innovation Solution
A memory management method that involves detecting temperature status changes and performing a data refresh operation by re-storing data from a first physical unit to a second physical unit when temperature conditions meet a specified threshold, ensuring consistent temperature conditions for data access.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If data is stored in rewritable non-volatile memory module, then storage capacity and portability are improved, but data reliability deteriorates under large temperature differences
Solution Approach 1:
The patent performs a data refresh operation by re-storing data from the first physical unit to a second physical unit when temperature conditions meet a specified threshold. This preliminary action prevents data degradation before it occurs, maintaining data reliability under temperature variations while preserving storage capacity.
2Reliability
If data refresh operation is performed to improve data reliability, then data reliability is improved, but system complexity increases
Solution Approach 1:
The patent monitors temperature status as a parameter and triggers data refresh operations based on temperature threshold conditions. By changing the operational state based on parameter monitoring, the system maintains data reliability without requiring complex continuous correction mechanisms, thus managing system complexity effectively.
Data Source
AI summary
A memory management method, a memory storage device, and a memory control circuit unit are provided. The method includes: detecting a first temperature status of a rewritable non-volatile memory module; performing a first write operation on a first physical unit under the first temperature status to store first data to the first physical unit; after performing the first write operation, detecting a second temperature status of the rewritable non-volatile memory module; in response to the first temperature status and the second temperature status meeting a first condition, performing a data refresh operation on the first physical unit under the second temperature status to re-store the first data to a second physical unit different from the first physical unit.