Memory Control Circuit Electron Injection for Charge Loss
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Solution Overview
Problem
Rewritable non-volatile memory modules face challenges in data preservation capacity and erasing efficiency due to charge loss over time, data access operations, and temperature changes, leading to increased decoding difficulty and decreased erasing efficiency.
Innovation Solution
A memory control method and circuit unit that applies an electronic pulse to word lines in a rewritable non-volatile memory module, specifically configured not to read, program, or erase memory cells, to improve data preservation and erasing efficiency by managing electron distribution in the tunneling oxide layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If charge is injected into memory cells for data storage, then data storage capability is achieved, but charge loss occurs over time leading to decreased data preservation capacity
Solution Approach 1:
The patent applies a preliminary electron injection pulse to memory cells before actual programming operations. This preliminary action establishes a baseline electron distribution that compensates for anticipated charge loss during subsequent data access operations, thereby maintaining data preservation capacity without requiring excessive charge injection that would accelerate degradation.
Solution Approach 2:
The patent dynamically adjusts the electron injection parameters (voltage, duration, timing) based on the operational state of memory cells. By changing these parameters adaptively, the system optimizes the balance between maintaining sufficient charge for data integrity and minimizing charge loss through repeated injection cycles, thus resolving the contradiction between data preservation and charge stability.
2Loss of information
If charge is injected into memory cells for data storage, then data storage is achieved, but decoding difficulty increases when reading data
Solution Approach 1:
The patent performs preliminary electron injection to establish optimal electron distribution before programming operations. This preliminary conditioning ensures that subsequent read operations encounter more stable charge distributions, reducing decoding difficulty while avoiding the need for excessive charge injection that would worsen charge loss and information degradation.
Solution Approach 2:
The patent implements a feedback mechanism where the system monitors charge distribution stability and decoding performance, then adjusts electron injection parameters accordingly. This closed-loop control ensures that charge injection levels are optimized to maintain readable data states without causing charge loss that would increase decoding difficulty, thus resolving the contradiction between information integrity and charge stability.
3Productivity
If charge is injected into memory cells, then data storage is achieved, but erasing efficiency decreases due to resistance against erase voltage
Solution Approach 1:
The patent applies preliminary electron injection to establish an optimal initial charge state before erasing operations. This preliminary conditioning reduces the resistance against subsequent erase voltages by creating a more favorable charge distribution, thereby improving erasing efficiency without requiring excessive charge injection that would increase resistance and energy consumption.
Solution Approach 2:
The patent dynamically adjusts electron injection parameters based on the operational phase (program vs. erase). By modifying injection voltage, duration, and timing according to whether the system is preparing for programming or erasing, the patent optimizes charge distribution to minimize resistance against erase voltages, thus improving erasing efficiency while managing charge loss.
4Ease of operation
If data access operations increase, then usability is improved, but charge loss increases leading to decreased data preservation
Solution Approach 1:
The patent performs preliminary electron injection to establish a robust charge foundation before frequent data access operations begin. This preliminary conditioning creates a buffer that absorbs charge loss from subsequent read operations, allowing high data access frequency without proportionally increasing charge loss and maintaining data preservation capacity.
Solution Approach 2:
The patent adaptively adjusts electron injection parameters based on data access patterns. When frequent access is detected, the system modifies injection timing and magnitude to compensate for anticipated charge loss, thereby maintaining data preservation capacity despite high operational intensity. This dynamic parameter adjustment resolves the contradiction between ease of operation and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances data quality and operation stability by maintaining electron balance, thereby improving data preservation capacity and erasing efficiency in memory cells.
Implementation Method 1
maintaining electron balance, thereby improving data preservation capacity and erasing efficiency in memory cells
Implementation Method 2
An electronic pulse is applied to at least one word line of the rewritable non-volatile memory module
Data Source
AI summary
A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: programming multiple first memory cells in a first physical erasing unit in a rewritable non-volatile memory module; and applying an electronic pulse to at least one word line in the rewritable non-volatile memory module. The at least one word line is coupled to multiple second memory cells in the first physical erasing unit. The second memory cells include the first memory cells. The electronic pulse is not configured to read, program, or erase the second memory cells.