Memory Control Circuit Unit for Dynamic Reliability Updates
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Solution Overview
Problem
The decoding performance of data read from rewritable non-volatile memory modules decreases due to shifts in the threshold voltage distribution of memory cells, affecting data reliability.
Innovation Solution
A memory control method that dynamically updates reliability information related to specific memory cells by obtaining shift information of the threshold voltage distribution, recovering original reliability information, and adjusting it to improve decoding performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the threshold voltage distribution of memory cells shifts, then the decoding performance decreases, but the data reliability should be maintained
Solution Approach 1:
The patent applies dynamics by making the reliability information updateable and adaptive. The system dynamically adjusts reliability information based on detected threshold voltage shifts, transitioning from static to dynamic operation. This allows the decoding system to adapt to changing memory cell characteristics and maintain optimal performance despite voltage distribution shifts.
Solution Approach 2:
The patent implements feedback by detecting threshold voltage shifts and using this information to update reliability parameters. The system measures the actual voltage distribution, compares it with expected values, and adjusts reliability information accordingly. This closed-loop feedback mechanism ensures that decoding performance is maintained despite changes in memory cell threshold voltages.
2Manufacturing precision
If reliability information is updated dynamically to adapt to threshold voltage shifts, then decoding performance improves, but system complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-establishing the framework for reliability information updates and threshold voltage detection mechanisms. The system prepares the necessary data structures, algorithms, and detection routines in advance, so that when voltage shifts occur, the updates can be performed efficiently without requiring complex real-time computations or system reconfigurations.
Data Source
AI summary
A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: reading multiple first memory cells using multiple read voltage levels to obtain a first threshold voltage distribution of the first memory cells; obtaining shift information of the first threshold voltage distribution with respect to an original threshold voltage distribution of the first memory cells; obtaining first reliability information corresponding to the first threshold voltage distribution; recovering original reliability information corresponding to the original threshold voltage distribution according to a statistical characteristic of the first reliability information; adjusting the original reliability information according to the shift information to obtain second reliability information corresponding to the first threshold voltage distribution; and updating reliability information related to the first memory cells according to the second reliability information.