Memory Controller Command Sequencing for Random Read Latency
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Solution Overview
Problem
Current memory systems face challenges in achieving high random read performance and low random read latency due to inefficiencies in command sequencing, particularly in NAND flash devices.
Innovation Solution
A memory controller that dynamically adjusts command sequences based on conditions, sending a first sequence without a read state command when the command queue exceeds thresholds, and a second sequence with read state commands when conditions are met, optimizing performance under varying load scenarios.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a read state command is inserted in the command sequence to ensure proper timing, then reliability of data read is improved, but random read latency increases
Solution Approach 1:
The patent dynamically adjusts the command sequence based on queue depth conditions. When the command queue depth exceeds a threshold, the system omits the read state command to reduce latency; when queue depth is below the threshold, the read state command is included to ensure reliability. This dynamic adaptation resolves the contradiction by making the timing approach conditional rather than fixed.
2Reliability
If commands are processed sequentially with proper waiting periods, then data read reliability is improved, but random read performance deteriorates
Solution Approach 1:
The patent segments the command processing into two distinct paths based on queue depth: a fast path that omits the read state command for high-performance scenarios, and a reliable path that includes the read state command for data integrity. This segmentation allows the system to achieve high random read performance when conditions permit while maintaining reliability when needed.
3Loss of time
If the command queue threshold is set low, then random read latency is reduced, but data read reliability may be compromised
Solution Approach 1:
The patent changes the operational parameters of the memory controller by introducing a configurable queue depth threshold. This parameter determines when to switch between the fast command sequence (without read state) and the reliable command sequence (with read state). By adjusting this parameter, the system can optimize the balance between latency and reliability based on specific operational requirements.
Data Source
AI summary
The present disclosure provides memory systems, memory controllers, control methods, computer readable memory mediums, and computer program products. An example method includes: in response to an operation instruction, determining whether a first condition is met; in response to the first condition being met, sending a first command sequence corresponding to the operation instruction to a memory device; and in response to the first condition not being met, sending a second command sequence corresponding to the operation instruction to the memory device.


