Nonvolatile Memory Controller Concurrent Programming and Threshold Adjustment

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Solution Overview

Problem

Current nonvolatile semiconductor memory systems require inefficient data updating processes that involve copying data to RAM, erasing, and re-programming, leading to increased processing time and external command interactions.

Innovation Solution

The integration of a memory controller that concurrently applies program stresses to erased memory cells and adjusts threshold voltages during data copying and programming, reducing the need for external RAM operations and narrowing the threshold voltage distribution among erased cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If data updating is performed by copying to external RAM, erasing, and re-programming sequentially, then data integrity is maintained, but data updating time is excessively long

Engineering Contradiction:

Improvedata integrityVSAvoiddata updating time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent combines multiple sequential operations (copying data to RAM, erasing block, programming updated data) into a single concurrent operation. The memory controller performs threshold voltage adjustment on erased cells simultaneously with programming operations, merging what were previously separate sequential steps into parallel execution, thereby reducing total updating time while maintaining data integrity through coordinated control of these operations

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The patent applies preliminary threshold voltage adjustment to erased memory cells before the programming operation completes. By adjusting the threshold voltage of erased cells during the programming process rather than after completion, the system prepares the memory state in advance, allowing subsequent operations to proceed faster without compromising data integrity

Inventive Principle:

Principle #10Preliminary action

2Reliability

If multiple sequential operations are performed for data updating, then operation reliability is ensured, but processing complexity increases

Engineering Contradiction:

Improveoperation reliabilityVSAvoidprocessing complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The memory controller is designed with multi-functionality to handle multiple operations simultaneously. It can perform data copying, threshold voltage adjustment, and programming operations through a unified control architecture, reducing the need for separate dedicated circuits for each operation while maintaining operational reliability through integrated control logic

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Ease of manufacture

If threshold voltage distribution is not narrowed after erasing, then programming simplicity is maintained, but memory cell reliability deteriorates

Engineering Contradiction:

Improveprogramming simplicityVSAvoidmemory cell reliability

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent performs threshold voltage adjustment as a preliminary action immediately after erasing memory cells and before programming. By narrowing the threshold voltage distribution of erased cells in advance, the system ensures better programming reliability and reduced variability in programmed states, while the automation of this process through the memory controller maintains operational simplicity

Inventive Principle:

Principle #10Preliminary action

4Reliability

If data copying to external RAM is performed, then data backup is achieved, but external processing time increases

Engineering Contradiction:

Improvedata backupVSAvoidexternal processing time

Core Design Contradiction:

ReliabilityVSLoss of time

Solution Approach 1:

The patent merges the data copying operation with the threshold voltage adjustment and programming operations into a single concurrent process. The memory controller coordinates these operations so that data is copied to RAM while threshold voltage adjustments are being applied and programming is occurring, eliminating the need for separate sequential execution of these steps and reducing external processing time while maintaining data backup reliability

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS8406059B2Nonvolatile semiconductor memory devices, data updating methods thereof, and nonvolatile semiconductor memory systems

Publication Date: 2013.03.26 SAMSUNG ELECTRONICS CO LTD

AI summary

Integrated circuit memory devices utilize techniques to improve the timing of data update operations within a non-volatile memory, by more efficiently combining memory cell programming operations with threshold voltage adjust operations on erased memory cells. These adjust operations operate to narrow a threshold voltage distribution between memory cells that remain in an erased state after the programming operation has been performed. An integrated circuit memory device may include at least a first block of non-volatile memory cells and a volatile memory device, which has a data storage capacity equivalent to at least a capacity of the at least a first block of non-volatile memory cells. A memory controller is also provided, which is electrically coupled to the at least a first block of non-volatile memory cells and the volatile memory device. The memory controller is configured to, among other things, control data update operations within a block of data stored within the first block of non-volatile memory cells.