Memory Controller Defective Word Line Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
NAND flash memory systems face responsiveness issues due to uncorrectable defects in word lines, which are difficult to detect and analyze, leading to prolonged error correction times and system deterioration.
Innovation Solution
A memory system with a controller that acquires and compares threshold voltage distributions between blocks to detect defective word lines using Kullback-Leibler divergence, preventing access to defective lines and maintaining system responsiveness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If access to word lines is permitted during the period from defect occurrence to detection, then the memory system can maintain operational continuity, but error correction time increases and system responsiveness deteriorates
Solution Approach 1:
The patent applies preliminary action by performing defect detection on word lines before normal access operations. The controller detects defective word lines by monitoring read operations and identifying patterns of read failures, then registers these defective lines in advance. This allows the system to prevent future access to defective word lines, avoiding the need for time-consuming error correction during normal operations and thereby maintaining system responsiveness.
2Reliability
If higher degree of error correction is executed on every access to the word line, then uncorrectable defects can be detected, but system responsiveness deteriorates
Solution Approach 1:
The patent implements self-service by enabling the memory system to automatically detect and identify defective word lines through its own read operations. The controller monitors read failures, analyzes patterns of errors, and autonomously registers defective word lines without requiring external intervention or complex error correction procedures. This self-diagnosis capability allows the system to maintain high reliability through accurate defect detection while preserving responsiveness by avoiding time-consuming error correction processes.
3Measurement precision
If defect detection and analysis is performed thoroughly, then accurate identification of defective word lines is achieved, but the period from defect occurrence to detection is prolonged
Solution Approach 1:
The patent employs feedback mechanisms by continuously monitoring read operations and using the results to identify defective word lines. When read failures occur, the controller analyzes the error patterns and feeds this information back to update the defective word line registry. This continuous feedback loop enables the system to achieve accurate defect detection while minimizing the detection period, as the system adapts and learns from each read operation rather than requiring exhaustive analysis.
Data Source
AI summary
According to one embodiment, a memory system includes a non-volatile memory and a controller. The memory includes a plurality of storage areas. Each of the storage areas includes a plurality of memory cells to which threshold voltages are set in accordance with data. The controller acquires a first threshold voltage distribution of memory cells in a first storage area of the storage areas. The controller acquires a second threshold voltage distribution of memory cells in a second storage area of the storage areas. The controller detects non-normalcy in the first storage area or the second storage area from a first divergence quantity between the first threshold voltage distribution and the second threshold voltage distribution.


