Memory Controller Impedance Calibration for High-Speed Signal Matching

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Solution Overview

Problem

In memory systems, signal reflection occurs due to impedance mismatch between the memory controller's input/output terminals and the data transmission line, leading to unstable data reception and interference, especially at high data signal speeds, necessitating an impedance calibration mechanism to prevent distortion.

Innovation Solution

A memory system with a memory controller that includes an input/output power voltage sensor and an impedance calibration circuit, which performs calibration based on changes in input/output power voltage, using reference voltages and calibration resistors to match impedance between the memory controller and the data transmission line.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If data signal speed is increased to improve productivity, then data transfer speed is improved, but signal reflection occurs due to impedance mismatch causing unstable data reception

Engineering Contradiction:
Improvedata transfer speedVSAvoiddata reception stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent implements dynamic impedance calibration by detecting changes in input/output power voltage and automatically adjusting the impedance calibration register values. This allows the impedance matching to adapt dynamically to power voltage variations, maintaining reliable data reception even at high data transfer speeds where signal reflection would otherwise occur.

Inventive Principle:
Principle #15Dynamics

2Reliability

If impedance calibration is performed to prevent signal reflection, then data reception stability is improved, but additional circuit components and calibration operations are required increasing device complexity

Engineering Contradiction:
Improvedata reception stabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements a self-calibrating impedance matching system that automatically detects power voltage changes and adjusts its own impedance calibration parameters without external intervention. The memory controller monitors its own power voltage and performs self-correction by updating the impedance calibration register, eliminating the need for complex external calibration circuits or manual adjustment mechanisms.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent employs a feedback mechanism where the input/output power voltage sensor continuously monitors power voltage changes and feeds this information to the impedance calibration circuit. Based on this feedback, the system automatically adjusts the impedance calibration register values to maintain optimal impedance matching, preventing signal reflection while keeping the added complexity minimal.

Inventive Principle:
Principle #23Feedback

3Reliability

If impedance calibration is performed dynamically in response to power voltage changes, then impedance matching accuracy is maintained under varying conditions, but additional sensing and control operations increase loss of time

Engineering Contradiction:
Improveimpedance matching accuracyVSAvoidcalibration operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent implements periodic impedance calibration triggered by power voltage change detection rather than continuous calibration. The input/output power voltage sensor monitors for voltage changes, and calibration is performed only when such changes are detected, maintaining impedance matching accuracy while minimizing the time lost to calibration operations compared to continuous or frequent calibration approaches.

Inventive Principle:
Principle #19Periodic action

Data Source

PatentUS10347358B2Memory system having impedance calibration circuit
Publication Date: 2019.07.09 SK HYNIX INC
  • US10347358B2 patent drawing
  • US10347358B2 patent drawing
  • US10347358B2 patent drawing

AI summary

A memory system includes: a buffer memory device; and a memory controller configured to communicate data with the buffer memory device, wherein the memory controller includes: an input/output power voltage sensor configured to generate a first signal by sensing a change in input/output power voltage; and an impedance calibration circuit configured to perform an impedance calibration operation in response to the first signal.