Memory Controller Invalid Block Pattern Stabilization

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Solution Overview

Problem

Flash memory devices experience reliability issues due to variations in threshold voltages of memory cells over time, leading to data identification problems and decreased storage reliability.

Innovation Solution

A method for a memory controller to detect invalid blocks, determine their state as either charge gain or charge loss, and apply specific invalid patterns to stabilize threshold voltages, thereby improving data reliability by offsetting charge gain or charge loss phenomena.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If flash memory devices are used for data storage, then data storage capacity is provided, but threshold voltage variations occur over time causing data identification problems and reliability decrease

Engineering Contradiction:
Improvedata storage reliabilityVSAvoidthreshold voltage stability over time
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The patent applies preliminary action by performing an invalid pattern operation on invalid blocks before they are reused. This pre-treatment stabilizes the threshold voltages of memory cells in invalid blocks by setting them to a specific invalid pattern (e.g., all 1s or all 0s), preventing future threshold voltage variations that would cause data identification problems when the blocks are subsequently reused for new data storage.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the parameter of threshold voltage distribution by applying an invalid pattern operation that sets memory cells in invalid blocks to a uniform state. This parameter change stabilizes the threshold voltages, creating a known reference state that prevents drift over time and ensures reliable data storage when the blocks are reused.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If memory blocks are reused after becoming invalid, then storage capacity is maintained, but threshold voltage variations cause data identification errors

Engineering Contradiction:
Improvememory block reuse efficiencyVSAvoiddata identification accuracy
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

Before reusing invalid blocks for new data storage, the patent performs a preliminary invalid pattern operation to stabilize threshold voltages. This ensures that when blocks are reused, they start from a known stable state, preventing data identification errors while maintaining high block reuse efficiency.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the threshold voltage distribution parameter of invalid blocks to a uniform invalid pattern before reuse. This parameter stabilization ensures accurate data identification in subsequently stored data, resolving the contradiction between maintaining productivity through block reuse and ensuring measurement precision for data identification.

Inventive Principle:
Principle #35Parameter changes

3Ease of operation

If no invalid pattern operation is performed on invalid blocks, then operation simplicity is maintained, but threshold voltage variations decrease storage reliability

Engineering Contradiction:
Improveblock management simplicityVSAvoiddata storage reliability
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The patent implements a self-service mechanism where the memory controller automatically detects invalid blocks and performs invalid pattern operations on them without requiring complex external intervention. This automated process maintains ease of operation while significantly improving data storage reliability by preventing threshold voltage variations.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent uses feedback by detecting the state of memory blocks to identify invalid blocks, then automatically applying invalid pattern operations based on this detection. This closed-loop feedback mechanism ensures reliability improvement through systematic invalid block management while maintaining operational simplicity through automation.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10726931B2Operation method of memory controller and operation method of storage device
Publication Date: 2020.07.28 SAMSUNG ELECTRONICS CO LTD
  • US10726931B2 patent drawing
  • US10726931B2 patent drawing
  • US10726931B2 patent drawing

AI summary

A method of operating a memory controller, the memory controller configured to control a nonvolatile memory device, the nonvolatile memory device including a plurality of memory blocks. The method including detecting an invalid block among the plurality of memory blocks; determining an invalid pattern based on a state of the invalid block; and performing an operation on the invalid block such that the invalid block has the invalid pattern.