Memory Controller Using Numerical Engine for Dynamic Read Voltage

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Solution Overview

Problem

Existing data accessing methods for rewritable non-volatile memory modules are inefficient due to suboptimal read voltages, leading to increased retry-read times and reduced usage efficiency, especially with the rise of numerical operations in portable devices.

Innovation Solution

A data accessing method utilizing a numerical calculation engine to determine the optimal read voltage for physical programming units in rewritable non-volatile memory modules by inputting state parameters, thereby improving read efficiency and enabling determination of whether written data is hot or cold, and its compressibility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If traditional fixed read voltage methods are used for reading data from physical programming units, then the reading process is simple and fast, but the read accuracy deteriorates leading to increased retry-read times

Engineering Contradiction:
Improveread accuracyVSAvoidretry-read time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent applies dynamics by transitioning from fixed read voltages to dynamically adjustable read voltages. The system initially reads data using multiple predetermined read voltages, then adjusts subsequent read voltages based on the actual read results and voltage characteristics stored in the voltage characteristic storage unit. This dynamic adjustment optimizes read accuracy while reducing retry-read operations.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements parameter changes by modifying read voltage parameters based on stored voltage characteristics and actual read results. The system changes the read voltage parameter dynamically according to the specific physical programming unit being accessed and the observed read outcomes, thereby improving read accuracy and reducing retries without increasing overall system complexity.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If multiple predetermined read voltages are used for reading data, then read accuracy may be improved, but the complexity of the reading process increases

Engineering Contradiction:
Improveread accuracyVSAvoidreading process complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-storing voltage characteristics (such as threshold voltages and voltage distribution data) in the voltage characteristic storage unit before actual data reading operations. This preliminary preparation allows the system to quickly determine optimal read voltages without complex real-time calculations, reducing reading process complexity while maintaining high read accuracy.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If retry-read operations are performed multiple times to ensure data accuracy, then read reliability improves, but accessing efficiency deteriorates

Engineering Contradiction:
Improvedata read reliabilityVSAvoidaccessing efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent implements feedback by using the results of initial read operations to inform and adjust subsequent read voltage selections. The system feeds back the actual read results and compares them against stored voltage characteristics to determine the optimal read voltage for the next attempt, thereby improving read reliability while minimizing the number of retry operations needed and maintaining high accessing efficiency.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS10445002B2Data accessing method, memory controlling circuit unit and memory storage device
Publication Date: 2019.10.15 PHISON ELECTRONICS
  • US10445002B2 patent drawing
  • US10445002B2 patent drawing
  • US10445002B2 patent drawing

AI summary

A data accessing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; reading the first physical programming unit by using a second read voltage to obtain second data; inputting a first state parameter corresponding to the first data and a second state parameter corresponding to the second data into a numerical calculation engine, and determining a third reading voltage for reading the first physical programming unit by the numerical calculation engine.