Memory Controller Parameter Tuning for Write Efficiency

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current memory systems face inefficiencies in programming operations due to the need for repeated parameter tuning, which increases program time and reduces reliability as memory cell characteristics change over program-erase cycles.

Innovation Solution

A memory system with a controller that executes 'programming for parameter tuning' to detect optimal write parameters, storing these in a register or table for subsequent 'programming with tuned parameters', reducing the frequency of parameter re-tuning and improving write efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If parameter tuning is performed frequently to adapt to changing memory cell characteristics, then reliability is improved, but program time increases

Engineering Contradiction:
ImprovereliabilityVSAvoidprogram time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The system performs parameter tuning in advance during manufacturing or initialization phases, storing the tuned parameters in a register or table. During normal write operations, these pre-determined parameters are reused without re-tuning, thereby maintaining reliability while avoiding time loss during routine programming.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system dynamically adjusts the frequency of parameter tuning based on program-erase cycle counts. Parameters are tuned initially and then reused for multiple cycles, with re-tuning triggered only when cycle thresholds are reached or performance degradation is detected, optimizing the balance between reliability and program time.

Inventive Principle:
Principle #15Dynamics

2Productivity

If parameter tuning is performed less frequently to reduce program time, then productivity is improved, but reliability deteriorates

Engineering Contradiction:
Improvewrite efficiencyVSAvoidreliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

Parameter tuning is performed in advance during manufacturing or initialization, and the results are stored for reuse. This preliminary action ensures that reliable parameters are available without performing time-consuming tuning operations during every write operation, thus improving productivity while maintaining reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system changes the tuning frequency parameter based on program-erase cycle counts. Instead of tuning at every operation or fixed intervals, the system adapts the tuning frequency dynamically, using stored parameters for multiple cycles and only re-tuning when necessary, thereby optimizing both productivity and reliability.

Inventive Principle:
Principle #35Parameter changes

3Loss of time

If optimal write parameters are stored and reused, then program time is reduced, but device complexity increases

Engineering Contradiction:
Improveprogram timeVSAvoiddevice complexity
Core Design Contradiction:
Loss of timeVSDevice complexity

Solution Approach 1:

Instead of performing complex tuning calculations during every write operation, the system creates a simplified copy of the tuned parameters and stores them in a register or table. During normal operations, this copied parameter set is reused directly, significantly reducing program time while adding minimal complexity through simple storage and retrieval mechanisms.

Inventive Principle:
Principle #26Copying

Data Source

PatentUS11869596B2Memory system including a semiconductor memory having a memory cell and a write circuit configured to write data to the memory cell
Publication Date: 2024.01.09 KIOXIA CORP
  • US11869596B2 patent drawing
  • US11869596B2 patent drawing
  • US11869596B2 patent drawing

AI summary

According to one embodiment, a memory system includes a nonvolatile semiconductor memory, and a controller. The semiconductor memory includes a memory cell, and a write circuit configured to write data to the memory cell by applying a program voltage to the memory cell and comparing a threshold voltage of the memory cell with a first reference voltage corresponding to the write data. The write circuit is configured to execute a first programming operation to obtain a value of a write parameter by comparing the threshold voltage with a second reference voltage different from the first reference voltage.