Memory Controller Parity Recovery for Weak 3D Memory Pages

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Solution Overview

Problem

Three-dimensional semiconductor memory devices face issues with weak pages that result in uncorrectable errors, leading to reduced read performance and rapid depletion of usable memory blocks, especially in applications requiring high durability like vehicle systems.

Innovation Solution

A controller generates parity data based on data from adjacent pages to recover data from weak pages, using an exclusive-OR operation to correct errors, thereby maintaining the usability of memory blocks.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If data is stored in weak pages of three-dimensional semiconductor memory devices, then memory capacity is increased, but uncorrectable errors occur leading to reduced read performance

Engineering Contradiction:
Improvememory capacityVSAvoidread performance
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The controller performs preliminary actions by generating and storing parity data in strong pages before data errors occur. When errors are detected in weak pages, the controller uses this pre-generated parity data to recover the corrupted data, preventing read failures without requiring physical remapping of data.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Parity data acts as an intermediary element that bridges the weak pages (containing actual data) and the strong pages (containing recovery information). The parity data enables error correction by providing backup information that can reconstruct corrupted data without direct access to the faulty memory locations.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If error correction operations are performed on weak pages, then data reliability is improved, but usable memory blocks are rapidly depleted

Engineering Contradiction:
Improvedata reliabilityVSAvoidusable memory block lifespan
Core Design Contradiction:
ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The controller generates and stores parity data in advance during programming operations. This preliminary preparation of recovery data allows the system to correct errors without needing to remap data to new memory blocks, thereby extending the lifespan of usable memory blocks.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Instead of discarding data from weak pages when errors occur, the system recovers the data by using parity information stored in strong pages. This recovery process allows the same memory blocks to be reused multiple times without depletion.

Inventive Principle:
Principle #34Discarding and recovering

3Reliability

If parity data is generated and stored for every page, then data recovery capability is maximized, but device complexity and storage overhead increase

Engineering Contradiction:
Improvedata recovery capabilityVSAvoidcontroller operation complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The controller applies different quality levels of error correction to different memory regions. Parity data is generated and stored selectively in strong pages based on their reliability characteristics, rather than uniformly across all pages. This localized approach optimizes recovery capability where needed while minimizing overall complexity.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12386704B2Controller and method of operating the same
Publication Date: 2025.08.12 SK HYNIX INC
  • US12386704B2 patent drawing
  • US12386704B2 patent drawing
  • US12386704B2 patent drawing

AI summary

A controller controls a semiconductor memory device including a plurality of pages. The controller includes a command generator configured to generate a command for controlling a program operation or a read operation of a semiconductor memory device, and a data recovery manager configured to generate parity data corresponding to a weak page among a plurality of pages included in the semiconductor memory device and recover data programmed to the weak page.