Memory Controller Command Queue Analysis for Read Speed
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Solution Overview
Problem
Conventional memory controllers perform unnecessary precharge and discharge operations for each read command in semiconductor memory devices, leading to reduced operating speed due to repeated voltage generator operations.
Innovation Solution
A method and device where the memory controller determines whether to generate a discharge command based on the type of command waiting to be transmitted, omitting discharge operations for successive read commands, thereby controlling the voltage generator to skip unnecessary precharge and discharge operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the memory controller performs precharge and discharge operations for each read command, then the voltage generator is properly prepared for each operation, but the operating speed is reduced due to repeated unnecessary operations
Solution Approach 1:
The memory controller performs preliminary analysis of the command queue to identify successive read commands before executing them. By detecting the pattern of consecutive read commands in advance, the controller can skip unnecessary precharge and discharge operations, thereby improving operating speed while maintaining proper voltage generator preparation for actual read operations.
2Speed
If the memory controller omits precharge and discharge operations for successive read commands, then the operating speed is improved, but the voltage generator may not be properly prepared
Solution Approach 1:
The memory controller implements a feedback mechanism that continuously monitors the command queue and detects successive read commands. Based on this feedback information, the controller dynamically adjusts its operation by skipping precharge and discharge only when appropriate (for consecutive reads), while ensuring the voltage generator is properly prepared for each actual read operation. This feedback-driven approach balances speed improvement with reliable voltage generator preparation.
3Reliability
If the memory controller performs discharge operations between all read commands, then the voltage generator is reset for each operation, but the time required for read operations increases
Solution Approach 1:
The memory controller performs preliminary detection of successive read commands in the command queue before executing read operations. By identifying the pattern of consecutive reads in advance, the controller can eliminate unnecessary discharge operations between these commands, thereby reducing the time required for read operations while maintaining proper voltage generator preparation through selective discharge only when needed.
Data Source
AI summary
The operation of a semiconductor memory device may be controlled by a method of operating a memory controller. The operating method may include transmitting a first read command to the semiconductor memory device, and determining whether to generate a discharge command based on the type of command waiting to be transmitted after the first read command.