Memory Controller Read Voltage Optimization for Storage Overhead
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Solution Overview
Problem
Data storage devices face unnecessary decoding and computing overhead during read operations due to failed read attempts, which increase operational and computational complexity.
Innovation Solution
A memory controller is implemented with an optimum read voltage retry controller and read fail controller to calculate and apply an optimum read voltage for failed read operations, reducing overhead by selectively performing soft decoding and retry operations based on the physical address of failed read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional read operations are performed without voltage optimization, then read speed is maintained, but decoding overhead and computational complexity increase due to failed read attempts
Solution Approach 1:
The system performs preliminary actions by calculating and storing optimal read voltages before actual read operations. When a read failure occurs, the pre-calculated optimal voltage for that specific physical address is applied immediately, avoiding the need for complex real-time decoding and voltage adjustment procedures.
Solution Approach 2:
The invention changes the read voltage parameter dynamically based on the physical address of the memory location. By adjusting the voltage parameter to its optimal value for each specific address, the system resolves read failures without requiring extensive decoding operations, thereby reducing computational complexity.
2Reliability
If complex recovery algorithms are applied to all failed read operations, then data recovery reliability improves, but computational burden increases
Solution Approach 1:
The system applies local quality by treating each physical address uniquely with its own optimal read voltage characteristic. Instead of applying uniform complex recovery algorithms to all failed reads, the system locally optimizes each address with its specific voltage parameter, achieving high recovery reliability with minimal computational effort.
Solution Approach 2:
The invention creates a copy or mapping of optimal voltages for each physical address in advance. This pre-computed voltage map serves as a lookup table that provides immediate solutions for read failures, eliminating the need to run energy-intensive recovery algorithms during actual read operations.
3Reliability
If optimal read voltage is calculated for each failed read operation, then read success rate improves, but operational overhead increases
Solution Approach 1:
The optimal read voltage calculation is performed as a preliminary action during system initialization or idle periods, not during actual read operations. This pre-computation stores voltage solutions in advance, so when read failures occur, the system simply retrieves the pre-calculated voltage without performing additional complex operations.
Data Source
AI summary
A data storage device having a reduced overhead according to an embodiment of the disclosed technology may include a plurality of memory chips each including a plurality of planes, and a memory controller configured to perform recovery algorithms that recover data corresponding to failed read operations among read operations performed on the plurality of memory chips, and the memory controller may generate a read voltage to be used in a first recovery algorithm using an address related to a selected read operation among the failed read operations and perform the first recovery algorithm on a memory location associated with the failed read operations using the read voltage.