Memory Controller Refresh Logic for Adjacent Cell Interference

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Solution Overview

Problem

Existing memory systems face challenges in reducing write interference on adjacent memory cells and improving access performance, particularly in high-frequency write operations.

Innovation Solution

A memory system with a memory controller that refreshes adjacent memory cells of a target memory cell when the count of write operations within a preset time duration exceeds a preset threshold, using different time durations and thresholds to manage write interference effectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If write operations are performed frequently on target memory cells to improve storage performance, then productivity is improved, but write interference on adjacent memory cells increases causing reliability deterioration

Engineering Contradiction:
Improvewrite operation speedVSAvoiddata retention of adjacent memory cells
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent performs preliminary refresh operations on adjacent memory cells before they are affected by write interference. The memory controller monitors write operations to target memory cells and proactively refreshes adjacent cells that are likely to be affected, preventing data loss before it occurs.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements a feedback mechanism where the memory controller counts write operations on target memory cells within a time window and uses this information to determine when to refresh adjacent memory cells. This feedback-driven approach dynamically adjusts refresh operations based on actual write activity patterns.

Inventive Principle:
Principle #23Feedback

2Reliability

If refresh operations are performed on adjacent memory cells to reduce write interference, then reliability is improved, but access time increases

Engineering Contradiction:
Improvedata retention of adjacent memory cellsVSAvoidmemory access time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs refresh operations only on specific adjacent memory cells that are determined to be affected by write interference, rather than refreshing all memory cells. This partial action approach reduces the time overhead while maintaining reliability for the affected cells.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The patent implements periodic refresh operations based on time windows and write operation counts. Instead of continuous monitoring and refreshing, the system checks write operation counts at periodic intervals and performs refresh operations only when thresholds are exceeded, reducing overall access time overhead.

Inventive Principle:
Principle #19Periodic action

3Reliability

If multiple time durations and thresholds are used to manage write interference, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvewrite interference managementVSAvoidcontrol logic complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent uses multiple time durations and threshold values as adjustable parameters to optimize write interference management. Different time windows and thresholds can be configured based on specific workload patterns and memory characteristics, allowing the system to adapt to different scenarios without fundamental changes to the control architecture.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20250174285A1Managing refreshment of memory cells in memory systems
Publication Date: 2025.05.29 YANGTZE MEMORY TECH CO LTD
  • US20250174285A1 patent drawing
  • US20250174285A1 patent drawing
  • US20250174285A1 patent drawing

AI summary

Systems, devices, methods, and storage media for managing refreshment of memory cells in memory systems are provided. In one aspect, a memory system includes: a non-volatile memory device including a plurality of memory cells and a memory controller coupled to the non-volatile memory device. The memory controller is configured to: refresh adjacent memory cells of a target memory cell of the plurality of memory cells, when a count of write operations performed on the target memory cell within a preset time duration is greater than a preset threshold.