Memory Controller Two-Step Program Operation SLC Buffer
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Solution Overview
Problem
The existing semiconductor memory devices face challenges in efficiently managing the Single-Level Cell (SLC) buffer, leading to high page usage rates and block erase counts, which deteriorate write performance and reduce the usage life of the storage device.
Innovation Solution
A two-step program operation is implemented, where the memory controller performs a first program operation to SLC program a first page to memory cells and stores a second page in the SLC buffer, and then during idle time, it performs a second program operation to TLC program the second page to the memory cells, thereby reducing the load on the SLC buffer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the SLC buffer performs frequent Program-Erase cycles to maintain write performance, then the write performance is improved, but the usage life of the storage device deteriorates
Solution Approach 1:
The patent segments the program operation into two distinct phases: a first program operation that fills the SLC buffer with data, and a second program operation that transfers data from the SLC buffer to the TLC memory device. This segmentation allows the SLC buffer to be used more efficiently, reducing the frequency of Program-Erase cycles and thereby extending the usage life of the storage device while maintaining write performance.
2Productivity
If the SLC buffer is used to improve write performance of TLC flash memory, then the write performance is improved, but the allocated storage space is consumed quickly
Solution Approach 1:
The patent implements continuous operation of the SLC buffer through a two-step program operation. The first program operation continuously fills the SLC buffer with incoming data, and the second program operation continuously transfers data from the buffer to the TLC memory device. This continuous action ensures that the SLC buffer is always ready to receive new data without consuming excessive storage space, as data is promptly transferred once written to the buffer.
3Productivity
If the SLC buffer performs frequent Program-Erase cycles to maintain write performance, then the write performance is improved, but the page usage rate increases
Solution Approach 1:
The patent performs preliminary action by first filling the SLC buffer with data through the first program operation before executing the second program operation to transfer data to the TLC memory device. This preliminary filling of the buffer with complete pages of data allows for more efficient transfer operations, reducing the number of times the SLC buffer needs to be erased and reused, thereby reducing the page usage rate and the time consumed for Program-Erase cycles.
Data Source
AI summary
A storage device includes a memory device configured to store data; a single-level cell (SLC) buffer configured temporarily to store data to be stored in the memory device; and a memory controller configured to control read operations or write operations of the memory device and the SLC buffer, wherein the memory controller is further configured to perform a first program operation to SLC program a first page to first memory cells of the memory device based on a host write request, store at least one second page to the SLC buffer, and perform, during an idle time, a second program operation of programming the at least second page stored in the SLC buffer to the first memory cells.