Memory Controller Voltage Adjustment for Decoding Reliability
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Solution Overview
Problem
The existing methods for determining the optimal read voltage for memory cells across different word lines in non-volatile memory modules are inefficient, leading to reduced performance and increased retry-reads due to the lack of a suitable voltage for decoding data across all memory cells.
Innovation Solution
A voltage adjusting method that involves reading and correcting data from physical programming units on a memory cell group to calculate an optimal read voltage by adjusting the initial read voltage based on error check and correction codes, thereby improving decoding success rates and reducing retry-reads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the retry-read mechanism is used to determine optimal read voltage for memory cells on one word line, then the decoding success rate for that word line is improved, but the performance of the memory controller deteriorates due to the inability to apply the same voltage order to other word lines
Solution Approach 1:
The patent applies local quality by determining optimal read voltage orders specifically for each word line based on its own characteristics rather than using a universal voltage order for all word lines. The memory management circuit identifies the optimal read voltage order for a first word line through retry-read mechanisms, then separately determines the optimal read voltage order for a second word line, allowing each word line to have customized voltage adjustment strategies tailored to its specific memory cell characteristics.
2Reliability
If the retry-read mechanism is repeatedly performed to find optimal read voltage, then the optimal read voltage for memory cells is obtained, but the time consumption increases and memory controller performance is reduced
Solution Approach 1:
The patent applies preliminary action by determining the optimal read voltage order for each word line in advance through retry-read mechanisms before actual data reading operations. The memory management circuit performs voltage optimization work beforehand, storing the determined optimal voltage orders for subsequent use, thereby avoiding repeated retry-read operations during normal read operations and reducing time loss.
3Device complexity
If a single read voltage order is used for all word lines, then the device complexity is reduced, but the decoding success rate deteriorates because the optimal voltage order for one word line may not be suitable for another
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting the read voltage order parameter based on the specific word line being accessed. The memory management circuit determines different optimal read voltage orders for different word lines (first word line vs. second word line), changing the voltage sequence parameters to match the characteristics of each word line, thereby improving decoding success rates without excessive complexity.
Data Source
AI summary
A voltage adjusting method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit in a first physical programming unit group to obtain first data; correcting the first data according to a first error check and correction code corresponding to the first data to obtain first corrected data; reading a second physical programming unit in the first physical programming unit group to obtain second data; and adjusting a first read voltage for reading a first memory cell to a second read voltage according to the first data, the first corrected data, and the second data.