Semiconductor Memory Controller Read Voltage Optimization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor memory devices face challenges in improving read performance due to errors in data retrieval, which are not effectively addressed by existing technologies.
Innovation Solution
A controller method that senses error correction failures, generates a new read voltage based on statistical analysis of previous successful read voltages, and determines whether this new voltage falls within an allowable range to optimize subsequent read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error correction is performed on read data, then data reliability is improved, but read performance deteriorates due to additional processing time and potential re-read operations
Solution Approach 1:
The system performs preliminary statistical analysis of read voltages during normal operation to establish distributions and characteristics before errors occur. This preliminary data collection enables faster error correction decisions when read errors are detected, reducing the time needed for re-read operations and improving overall read performance while maintaining high error correction success rates
2Reliability
If multiple read voltage levels are tested to improve read accuracy, then error correction capability is improved, but device complexity increases due to additional voltage control mechanisms
Solution Approach 1:
The system dynamically adjusts read voltage parameters based on statistical analysis of previous read operations and detected errors. Instead of using multiple fixed voltage levels, the system modifies voltage parameters (magnitude, timing, sequence) adaptively based on real-time performance data, achieving improved read accuracy without requiring complex multi-level voltage control hardware
3Productivity
If statistical analysis of read voltages is performed to optimize read operations, then read performance is improved, but computational requirements and storage needs increase
Solution Approach 1:
The system extracts only the essential statistical parameters (mean, standard deviation, voltage distribution characteristics) from the vast amount of read voltage data generated during operation. By taking out only these key statistical features rather than storing and processing all raw voltage data, the system achieves improved read performance through statistical optimization while minimizing computational and storage requirements
Data Source
AI summary
The present technology includes a method of operating a controller capable of controlling a semiconductor memory device including a plurality of memory cells. The method of operating the controller includes sensing error correction failure of data read from the semiconductor memory device, generating a new read voltage for re-reading the data, determining whether the new read voltage belongs to an allowable range depending on a read voltage statistical value of previous read voltages according to which error corrections were successful on previously read data, and determining, based on a result of the determining whether the new read voltage belongs to the allowable range, a read voltage to be used in a next read operation of re-reading the data.