Memory Crack Detection Circuits for Cell-Peripheral Interfaces
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Solution Overview
Problem
Nonvolatile memory devices face challenges in detecting cracks effectively, particularly at the interface between the peripheral circuit region and the cell region, which can impact data storage reliability.
Innovation Solution
Incorporation of a net crack detection circuit and a ring crack detection circuit within the nonvolatile memory device, comprising crack detection metal wirings and transistors, to identify cracks in both the cell and peripheral circuit regions, using aluminum, copper, or tungsten for the metal wirings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If crack detection circuits are added to the nonvolatile memory device, then crack detection reliability is improved, but device complexity increases
Solution Approach 1:
The crack detection function is segmented into two independent circuits: a net crack detection circuit and a ring crack detection circuit. Each circuit is responsible for detecting cracks in different regions (cell region and peripheral circuit region respectively), allowing the detection function to be divided and distributed without requiring a single complex detection system.
Solution Approach 2:
Dummy metal wirings are introduced as intermediary elements that serve dual purposes: they function as part of the crack detection circuits while also filling empty spaces in the layout. These dummy wirings act as mediators that enable crack detection without significantly increasing the overall device complexity, as they utilize otherwise unused spatial resources.
2Measurement precision
If net crack detection circuit and ring crack detection circuit are implemented, then crack location identification precision is improved, but manufacturing complexity increases
Solution Approach 1:
The net crack detection circuit and ring crack detection circuit are merged into a unified detection system that shares common components such as crack detection transistors and signal processing pathways. This integration allows both detection functions to coexist while reducing the total number of discrete components and simplifying the manufacturing process.
Solution Approach 2:
The crack detection circuits are designed with universal components that serve multiple functions. For example, the dummy metal wirings serve both as structural fillers and as active detection elements. The crack detection transistors can detect cracks in different regions through their respective circuit configurations, providing multi-functional detection capability without requiring separate dedicated components for each region.
Data Source
AI summary
There is provided a nonvolatile memory device having improved crack detection reliability. The nonvolatile memory device comprises word lines that extend in a first direction, cell contact plugs that are electrically connected to the word lines and extend in a second direction intersecting the first direction, a net crack detection circuit that is on the word lines and is not in contact with the word lines, and a ring crack detection circuit that is on the word lines and is not in contact with the word lines, wherein the net crack detection circuit is electrically connected to a crack detection transistor in a peripheral circuit region, the ring crack detection circuit includes a first crack detection metal wiring that extends in a third direction intersecting the first direction and the second direction, and a second crack detection metal wiring that extends in the third direction.