Memory Cross-Temperature Measurement for Reliable Read Voltage Adjustment
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Solution Overview
Problem
Memory systems experience read errors and failures due to cross-temperature conditions, where data is written at one temperature and read at a different temperature, causing shifts in read voltage and bit errors, with existing mitigation techniques affecting other capabilities or host performance.
Innovation Solution
The memory system records cross-temperature measurements by determining temperatures during write and read operations, storing indications of temperature differences, and generating a cross-temperature model to improve reliability and mitigate degradations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing mitigation techniques are used to reduce cross-temperature conditions, then read errors are reduced, but other capabilities or host performance are affected
Solution Approach 1:
The patent implements a feedback mechanism by monitoring temperature conditions during write and read operations, comparing the temperature difference against thresholds, and dynamically adjusting read voltage based on the monitored temperature conditions. This closed-loop approach allows the system to maintain reliability while avoiding unnecessary performance degradation from static mitigation techniques.
Solution Approach 2:
The patent dynamically changes the read voltage parameter based on monitored temperature conditions. By adjusting the read voltage according to the temperature difference between write and read operations, the system adapts to cross-temperature conditions without requiring conservative fixed parameters that would degrade overall performance.
2Reliability
If existing mitigation techniques are used to reduce cross-temperature conditions, then read errors are reduced, but other capabilities are affected
Solution Approach 1:
The patent transitions from static mitigation approaches to dynamic temperature-aware read operations. The system continuously monitors temperature conditions and adapts read voltage in real-time, allowing the memory system to maintain full functionality across varying temperature conditions rather than requiring conservative fixed parameters that limit capabilities.
3Adaptability or versatility
If cross-temperature conditions occur, then data is written at one temperature and read at a different temperature, but read voltage shifts and bit errors increase
Solution Approach 1:
The patent performs preliminary temperature monitoring during write operations and stores this temperature information with the data. When a read operation occurs, the system retrieves the stored write temperature and uses it to determine the appropriate read voltage adjustment before actually performing the read, preventing errors rather than reacting to them.
Solution Approach 2:
The system uses feedback from temperature monitoring to dynamically adjust read voltage. By continuously comparing the current read temperature with the stored write temperature and adjusting the read voltage based on this temperature difference, the system compensates for voltage shifts caused by cross-temperature conditions.
Data Source
AI summary
Methods, systems, and devices for cross-temperature measurement of a memory system are described. A memory system may record cross-temperature measurements during operation. For example, the memory system may record, at a first time, a temperature of data stored at the memory system and may compare the recorded temperature at the first time with a write temperature of the data that was recorded at a second time. In some examples, recording the temperature of the data at the first time may be part of performing a read operation or may be part of performing one or more maintenance operations. A difference between the temperature of the data at the first time and the write temperature may be stored at the memory system.