3D Memory Cube Packaging With Anisotropic Heat Dissipation
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Solution Overview
Problem
As semiconductor devices downscale and operate at higher speeds, effective thermal dissipation becomes a critical issue affecting their performance, particularly in highly integrated packaging where existing solutions fail to adequately manage heat generation.
Innovation Solution
The implementation of a memory device manufacturing method involving a thermally conductive layer with anisotropic thermal conductivity, integrated into a 3D packaging structure that includes through insulator vias and redistribution layers to enhance heat dissipation by providing both lateral and vertical thermal paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If semiconductor devices are downscaled and operated at higher speeds, then operation speed and integration density are improved, but thermal dissipation capability deteriorates
Solution Approach 1:
The patent introduces a three-dimensional packaging structure with multiple tiers stacked vertically, transforming the traditional two-dimensional heat dissipation approach into a three-dimensional thermal management system. This allows heat to be dissipated through both lateral pathways (within each tier) and vertical pathways (through the stack), effectively addressing thermal accumulation in highly integrated devices while maintaining high operation speeds and integration density.
2Ease of manufacture
If traditional packaging structures are used, then manufacturing simplicity is maintained, but heat dissipation efficiency is insufficient
Solution Approach 1:
The patent employs composite thermal management structures combining different materials with complementary thermal properties. The thermal conduction layers use materials with high thermal conductivity to efficiently transport heat, while the encapsulant materials provide both structural support and thermal pathways. This composite approach achieves superior heat dissipation efficiency without significantly complicating the manufacturing process, as the layers can be integrated into existing semiconductor fabrication workflows.
3Productivity
If heat dissipation is not adequately managed, then device performance is maintained, but hot spots cause damage and reduce reliability
Solution Approach 1:
The patent divides the thermal management system into multiple segmented components: individual thermal conduction layers in each tier, distributed heat dissipation pathways, and separated thermal zones. This segmentation prevents localized heat accumulation by distributing thermal loads across multiple pathways and regions, effectively eliminating hot spots while maintaining high device performance and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves heat dissipation efficiency by at least 50%, reducing operation temperatures and preventing damage from hot spots, thereby enhancing the reliability and performance of memory devices.
Implementation Method 1
a thermally conductive layer 446 formed in a laterally thermal transmission region U2 of the packaging unit PU... configured to provide lateral thermal paths for assisting heat dissipation
Implementation Method 2
The thermally conductive layer 446 may include an anisotropic thermal conductivity material having a maximum thermal conductivity along a plane substantially perpendicular to the stacking direction Z
Data Source
AI summary
A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers. Each redistribution structure in the multiple stacked tiers includes redistribution patterns, the redistribution structure closest to the first semiconductor die further includes a thermally conductive layer connected to the first semiconductor die, wherein a material of the redistribution patterns in the multiple stacked tiers is different from a material of the thermally conductive layer of the redistribution structure closest to the first semiconductor die, and the thermally conductive layer is electrically isolated from the second semiconductor dies in the multiple stacked tiers and the first semiconductor die.