Cavity-Embedded Memory Cube Interposer for Logic and Thermal Routing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor device packaging methods lack efficient integration of high-density memory devices and logic devices, leading to suboptimal connectivity and heat management, especially in densely packed microelectronic systems.
Innovation Solution
The semiconductor device assembly incorporates a package substrate with cavities for stacked memory devices and an interposer that provides connectivity between the logic device and the substrate, along with an encapsulant and thermal lid for enhanced heat extraction, and optionally includes wireless interconnect structures at the sidewall of the cavity for flexible routing and thermal management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional packaging methods are used to integrate memory devices and logic devices, then the packaging process is simple, but the connectivity efficiency and heat management are suboptimal
Solution Approach 1:
The packaging structure is segmented into distinct functional zones: cavities for memory device stacks, an interposer layer for logic device integration, and dedicated thermal management pathways. This segmentation enables optimized connectivity and heat extraction while maintaining manufacturing feasibility through modular assembly processes.
Solution Approach 2:
The patent transitions from planar packaging to three-dimensional vertical integration by stacking memory devices in cavities and using an interposer layer to establish vertical electrical and thermal pathways. This dimensional change increases connectivity density and improves heat extraction efficiency without significantly increasing footprint area.
2Area of stationary object
If high-density memory devices are stacked vertically, then the area occupied is reduced, but the heat dissipation becomes more challenging
Solution Approach 1:
The interposer layer serves as a thermal intermediary between the stacked memory devices and the package substrate. It provides dedicated thermal pathways that conduct heat away from the high-density vertical stack, enabling effective heat dissipation while maintaining compact footprint through the vertical integration architecture.
3Reliability
If complex interconnection structures are used to connect memory and logic devices, then the connectivity is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The interposer layer incorporates self-alignment features and pre-configured interconnection structures that automatically guide and register with the memory device stacks during assembly. This self-service mechanism reduces the stringency of external alignment requirements and simplifies the manufacturing process while maintaining high signal integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient electrical and thermal connectivity between memory and logic devices, allowing for improved signal alignment, increased flexibility in assembly, and effective heat dissipation, thereby enhancing the performance and reliability of semiconductor device assemblies.
Implementation Method 1
a thermal lid can optionally be provided over the encapsulant, and in direct contact with or proximate to the logic device
Data Source
AI summary
A semiconductor device assembly comprises a package substrate including (i) an upper surface having a plurality of internal contacts, (ii) a lower surface having a plurality of external contacts coupled to the plurality of internal contacts, and (iii) a cavity extending into the package substrate. The assembly further comprises a stack of first semiconductor devices disposed in the cavity, an uppermost first semiconductor device of the stack having a plurality of stack contacts, and an interposer including (i) a bottom surface having a first plurality of lower contacts coupled to the plurality of stack contacts and a second plurality of lower contacts coupled to the plurality of internal contacts, and (ii) a top surface having a plurality of upper contacts coupled to the first and second pluralities of lower contacts. The assembly further comprises a second semiconductor device including a plurality of die contacts coupled to the plurality of upper contacts.


