Stacked Memory Cube Thermal Layer for Heat Dissipation
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Solution Overview
Problem
As semiconductor devices downscale and operate at higher speeds, thermal dissipation becomes a critical issue affecting their performance, with existing technologies struggling to effectively manage heat in highly integrated semiconductor packaging.
Innovation Solution
The implementation of a memory device manufacturing method involving a thermally conductive layer with anisotropic thermal conductivity, integrated into a frame-shaped configuration within the packaging unit, which provides lateral thermal paths while maintaining electrical isolation from semiconductor dies, enhancing heat dissipation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If semiconductor devices are downscaled and operated at higher speeds, then operation speed and integration density are improved, but thermal dissipation capability deteriorates
Solution Approach 1:
The patent introduces a frame-shaped thermally conductive layer configured in a rectangular pattern with openings, transitioning from conventional point-source or linear heat sinks to a two-dimensional distributed thermal management structure. This dimensional expansion provides multiple lateral thermal pathways throughout the packaging unit, significantly improving heat dissipation capability while maintaining compatibility with downscaled high-speed device operations
2Productivity
If highly integrated semiconductor packaging is implemented, then device integration density is improved, but thermal management capability deteriorates
Solution Approach 1:
The thermally conductive layer is segmented into a frame-shaped structure with multiple openings, creating distributed thermal management zones throughout the packaging unit. This segmentation allows heat to be dissipated through multiple discrete pathways rather than relying on a single centralized heat sink, effectively managing thermal loads in highly integrated packaging configurations
Solution Approach 2:
The patent implements a two-dimensional frame-shaped thermally conductive layer that spans across the packaging unit, providing lateral thermal pathways in the planar dimension. This dimensional approach complements vertical heat dissipation routes, creating a three-dimensional thermal management network that scales effectively with increased integration density
3Temperature
If thermally conductive materials are added to improve heat dissipation, then thermal management is improved, but electrical isolation requirements create design complexity
Solution Approach 1:
The patent introduces a dielectric layer positioned between the frame-shaped thermally conductive layer and the semiconductor die, serving as an intermediary that simultaneously provides electrical isolation and thermal coupling. This dielectric mediator allows the thermally conductive layer to be electrically isolated from the die while maintaining thermal contact through the encapsulant, resolving the conflict between electrical isolation and thermal management requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly improves heat dissipation efficiency by at least 50%, reducing operation temperatures and protecting semiconductor dies from heat damage, thereby enhancing the reliability and performance of memory devices.
Implementation Method 1
a thermally conductive layer (446) in the fourth tier (10D), wherein the thermally conductive layer (446) is configured to provide thermal paths laterally in the packaging unit (PU)
Data Source
AI summary
A memory device including a first semiconductor die and a memory cube mounted on and connected with the first semiconductor die is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes second semiconductor dies laterally wrapped by an encapsulant and a redistribution structure disposed on the second semiconductor dies and the encapsulant. The second semiconductor dies of the multiple stacked tiers are electrically connected with the first semiconductor die through the redistribution structures in the multiple stacked tiers. Each redistribution structure in the multiple stacked tiers includes redistribution patterns, the redistribution structure closest to the first semiconductor die further includes a thermally conductive layer connected to the first semiconductor die, wherein a material of the redistribution patterns in the multiple stacked tiers is different from a material of the thermally conductive layer of the redistribution structure closest to the first semiconductor die, and the thermally conductive layer is electrically isolated from the second semiconductor dies in the multiple stacked tiers and the first semiconductor die.