Memory Data Line Knockout for Lower Page-Read Current

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Solution Overview

Problem

Reverse read sequences in memory devices activate unselected cells, leading to increased pillar current and total read current, requiring better common source connections and affecting efficiency and reliability.

Innovation Solution

Implementing schemes to selectively deactivate or 'knock out' specific data lines during page-read operations, minimizing total read current and alleviating issues associated with increased pillar current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If reverse read sequences are used to read memory cells, then read operation speed is improved, but pillar current and total read current increase

Engineering Contradiction:
Improveread operation speedVSAvoidpillar current and total read current
Core Design Contradiction:
SpeedVSPower

Solution Approach 1:

The patent segments the data lines into two groups: first data lines and second data lines. During reverse read operations, only the first data lines are activated while the second data lines are kept inactive (knocked out). This segmentation allows the system to maintain fast read speeds through reverse read sequences while reducing the total current draw by activating only a subset of data lines, thereby resolving the contradiction between read speed and power consumption.

Inventive Principle:
Principle #1Segmentation

2Productivity

If all data lines are activated during page-read operations, then complete data access is achieved, but power consumption increases

Engineering Contradiction:
Improvedata access completenessVSAvoidpower consumption
Core Design Contradiction:
ProductivityVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by differentiating the activation status of different data lines based on their specific roles in the read operation. First data lines are activated for complete data access, while second data lines are knocked out to reduce power consumption. This localized differentiation allows the system to maintain data access completeness where needed while reducing overall power consumption, resolving the contradiction between productivity and energy usage.

Inventive Principle:
Principle #3Local quality

3Loss of energy

If data line knock out is implemented, then power saving is achieved, but device complexity increases

Engineering Contradiction:
Improvepower savingVSAvoiddata line control complexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent implements dynamic control of data line activation by introducing control logic that can selectively activate or knock out data lines based on the read operation requirements. The system dynamically switches between activating first data lines and knocking out second data lines during reverse read operations. This dynamic approach enables power saving while managing complexity through programmable control rather than static hardware redesign.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20260031153A1Data line knock out for power saving while accessing memory cells
Publication Date: 2026.01.29 MICRON TECHNOLOGY INC
  • US20260031153A1 patent drawing
  • US20260031153A1 patent drawing
  • US20260031153A1 patent drawing

AI summary

A method performed by a memory device to conserve power through bit line knockout schemes is provided. The memory device comprises an array of memory cells and a plurality of data lines. The method comprises determining if a memory read request is a continuous read request. Based on the determination: performing a current page-read operation of respective memory cells coupled to the plurality of data lines; classifying one or more data lines of the plurality of data lines into a knockout group if, based on a result of the current page-read operation and/or previous page-read operations if any, a result of a next page-read operation of the one or more data lines of the plurality of data lines is predictable; and performing the next page-read operation of respective memory cells coupled to one or more data lines of the plurality of data lines that are not in the knockout group.