Semiconductor Memory Data Output Driver Control Logic

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional semiconductor memory devices face issues with incomplete data output due to rapid disabling of the data output driver, leading to systematic errors, as the delay time in the input/output control signal is sensitive to process conditions, voltage, and temperature, causing the last data in a burst to not be outputted fully.

Innovation Solution

The semiconductor memory device employs a first and second input/output control unit, utilizing enabling signals ROUTEN and FOUTEN, respectively, to manage the sensing node levels and output control signals, eliminating the need for a delaying device, ensuring the data output driver remains active throughout the data output process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a delaying device is used to extend the enabling interval of the data output driver, then the data output completeness is improved, but the device complexity increases and the delay time becomes sensitive to process conditions, voltage, and temperature

Engineering Contradiction:
Improvedata output completenessVSAvoidinput/output control block complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts and removes the delaying device from the input/output control block. Instead of using a separate delaying device to extend the enabling interval, the invention directly controls the output driver enable signal through optimized control logic that eliminates the need for additional delay components, thereby reducing device complexity while maintaining data output completeness.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent applies preliminary action by pre-positioning the output driver enable signal control logic to automatically extend the enabling interval without requiring a delaying device. The control logic is designed to maintain the enable signal active throughout the entire data output period, preventing rapid disabling before the data output is complete.

Inventive Principle:
Principle #10Preliminary action

2Speed

If the delay time is shortened to improve operation speed, then the operation speed increases, but the data output driver is disabled too rapidly causing incomplete data output

Engineering Contradiction:
Improveoperation speedVSAvoiddata output completeness
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent applies dynamics by making the output driver enable signal duration adaptive to the actual data output timing. Instead of using a fixed delay time that may be too short under certain conditions, the control logic dynamically adjusts the enable signal to remain active precisely for the duration needed to complete the data output, ensuring both high speed operation and complete data transfer.

Inventive Principle:
Principle #15Dynamics

3Productivity

If the data output driver is disabled rapidly to improve clock frequency, then the operation speed increases, but systematic errors occur due to incomplete data output

Engineering Contradiction:
ImprovebandwidthVSAvoiddata output accuracy
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies feedback by using the clock signal and data timing information to control the output driver enable signal duration. The control logic monitors the data output timing and maintains the enable signal active until the data output is complete, preventing systematic errors while allowing high-speed operation. This feedback mechanism ensures that the enable signal duration is precisely matched to the data output requirements.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS7349290B2Semiconductor memory device
Publication Date: 2008.03.25 MIMIRIP LLC
  • US7349290B2 patent drawing
  • US7349290B2 patent drawing
  • US7349290B2 patent drawing

AI summary

A semiconductor memory device is provided. The semiconductor memory device includes: a first input/output control unit for changing a sensing node into a first level in response to an activation of a first enabling signal for enabling an output of a data synchronized with a rising edge of a clock signal; a second input/output control unit for changing the sensing node into a second level in response to a delay locked clock signal as the second input/output control unit is enabled when the first enabling signal and a second enabling signal for enabling an output of a data synchronized with a falling edge of the clock signal are disabled; an output unit for outputting an input/output control signal; and a data output driver for outputting a data as the data output driver is activated in response to a first level of the input/output control signal.