Memory Data Polarity Transformation for Leakage Reduction
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Solution Overview
Problem
Memory devices, such as DRAM, experience data retention issues and increased power consumption due to current or charge leakage, leading to higher error rates and poorer performance for certain storage states.
Innovation Solution
A memory device transforms data before storage to reduce leakage by determining if a data word meets specific storage state criteria, generating a transformed version with lower leakage characteristics, and storing an indicator to facilitate accurate reading.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If data is stored in certain storage states in memory devices, then data retention is poor and error rates increase due to current or charge leakage, but transforming data before storage increases device complexity
Solution Approach 1:
The patent applies preliminary action by transforming data words before they are stored in memory cells. The memory controller analyzes incoming data words and applies transformations (such as bit inversion or symbol substitution) to convert storage states with poor retention characteristics into states with better retention characteristics before the data is written to the memory device. This proactive approach prevents leakage-related errors before they occur.
Solution Approach 2:
The patent implements parameter changes by modifying the physical or logical parameters of data representation. Specifically, it changes the storage state parameters by transforming data words from one representation form to another (e.g., changing from a data word with high leakage states to an equivalent data word with low leakage states). This allows the same logical information to be stored in a physically more stable form.
2Loss of energy
If data transformation is applied to reduce leakage, then power consumption decreases and data retention improves, but the storage process becomes more complex
Solution Approach 1:
The memory controller performs preliminary transformation of data words before storage, converting them into forms that inherently consume less power during retention. By pre-processing the data to avoid high-leakage states, the system reduces ongoing power consumption without requiring additional power management operations during data retention.
Solution Approach 2:
The patent converts the potential harm of complex storage processes into benefit by using the complexity of data transformation to achieve lower power consumption. The transformation process, while adding operational steps, enables the memory system to store data in states that naturally exhibit lower leakage and power consumption, turning a complex process into a power-saving mechanism.
3Ease of manufacture
If certain storage states are used to simplify writing, then data retention deteriorates due to higher leakage, but avoiding these states increases processing overhead
Solution Approach 1:
The patent changes the parameters of data representation during the writing process. Instead of using simple, direct writing of arbitrary data words, the system transforms the data word parameters (bit patterns, symbol values) to equivalent representations that avoid high-leakage storage states. This maintains writing simplicity while improving retention by changing how the same information is encoded.
Solution Approach 2:
The memory controller discards the original data word representation and recovers the same information in a transformed representation. By discarding the direct mapping and recovering the information in an alternative form (with better retention characteristics), the system achieves both writing simplicity and improved data retention.
Data Source
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AI summary
Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.