Memory Data Recovery via Fringing Field Electron Re-injection
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Solution Overview
Problem
Data retention errors occur in memory devices due to electron loss, causing threshold voltage shifts and resulting in data read errors, which existing data recovery methods do not adequately address.
Innovation Solution
A data recovery method involving the application of specific program voltages to target and adjacent memory cells through word lines, generating a fringing electric field to re-inject electrons and compensate for losses, thereby maintaining target threshold voltages and suppressing lateral electron migration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If program voltages are applied to move threshold voltage distribution toward high voltage direction, then data recovery is improved, but electron loss and threshold voltage shifts due to word line interference are not adequately addressed
Solution Approach 1:
The patent applies preliminary anti-action by detecting word line interference before it causes data read errors, and applying compensation program voltages to adjacent memory cells in advance to counteract the expected threshold voltage shifts caused by interference from target memory cell programming
Solution Approach 2:
The patent performs preliminary action by conducting a detection read operation before the main read operation to identify memory cells affected by word line interference, and applying compensation program voltages beforehand to prevent data read errors
2Reliability
If conventional data recovery methods are used, then some data retention errors are corrected, but data read errors caused by word line interference remain unaddressed
Solution Approach 1:
The patent implements feedback by using the detection read operation results to identify which memory cells are affected by word line interference, and using this information to apply targeted compensation program voltages to adjacent memory cells, creating a closed-loop error correction system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively mitigates electron loss and improves data recovery efficiency by maintaining target threshold voltages, reducing data retention errors and enabling reuse of memory cells.
Implementation Method 1
generating a fringing electric field to re-inject electrons and compensate for losses
Implementation Method 2
when electrons accumulated in the memory cell are lost, decrease of the number of electrons will cause the threshold voltage Vt of the memory cell to decrease
Implementation Method 3
generating a fringing electric field to re-inject electrons and compensate for losses
Implementation Method 4
suppressing lateral electron migration
Data Source
AI summary
A data recovery method for a memory device is disclosed. The memory device has a target memory cell, a target word line and an adjacent word line, the adjacent word line is adjacent to the target word line. The target word line is connected to a gate of the target memory cell. The adjacent word line is connected to a gate of an adjacent memory cell, and the adjacent memory cell is adjacent to the target memory cell. The data recovery method includes the following steps. Applying a first program voltage to the target memory cell through the target word line. When applying the first program voltage, concurrently applying a second program voltage to the adjacent memory cell through the adjacent word line.