Semiconductor Memory Data Transmission Line Segmentation
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Solution Overview
Problem
Long data transmission lines in high-integration semiconductor memory devices lead to increased loading capacitance and signal distortion, reducing data transmission speed, and existing solutions like shielding lines and repeaters either fail to prevent load increase or limit speed improvement due to parasitic capacitance and coupling effects.
Innovation Solution
A data transmission line structure with repeaters having switch functions and data lines aligned in different layers, controlled by even and odd control signals to optimize data paths during read and write operations, reducing parasitic capacitance and coupling effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If data transmission lines are lengthened to accommodate high-integration memory devices, then device capacity is improved, but loading capacitance increases and data transmission speed decreases
Solution Approach 1:
The long data transmission line is divided into multiple segments by inserting repeaters at intermediate points. Each repeater segment handles a shorter transmission distance, reducing the cumulative loading capacitance effect. The repeaters actively regenerate signals at each segment boundary, maintaining transmission speed despite the overall increased line length required for high-capacity devices.
2Quantity of substance
If data transmission lines are placed close together to increase integration density, then device capacity is improved, but parasitic capacitance and coupling effects increase causing signal distortion
Solution Approach 1:
Ground lines are inserted as intermediary elements between adjacent data transmission lines. These ground lines act as shields that electrically isolate the data lines from each other, reducing parasitic capacitance and coupling effects. This allows data lines to be placed closer together for higher integration density while maintaining signal integrity through the mediating ground structures.
3Object-affected harmful factors
If ground lines are added to shield data transmission lines, then coupling effects are reduced, but load increases and data transmission speed decreases
Solution Approach 1:
The transmission line structure is segmented into sections with ground lines only at specific intervals rather than continuous grounding. Repeaters are strategically placed to regenerate signals before the cumulative effect of ground line loading becomes significant. This segmented approach maintains shielding benefits while limiting the total capacitive load on each data transmission segment.
4Speed
If repeaters are added to prevent data transmission speed degradation, then data transmission speed is maintained, but device complexity increases
Solution Approach 1:
The repeaters are designed to perform multiple functions simultaneously: signal regeneration, even/odd data path selection, and integration with pipe latch units for data buffering. By combining these functions into a single multi-functional repeater structure, the patent reduces the need for separate components, thereby limiting the increase in device complexity while maintaining data transmission speed.
Data Source
AI summary
Disclosed are a data transmission line and a repeater connected to the data transmission line of a semiconductor memory device. The data transmission line includes the repeater capable of transmitting control signals related to even data or odd data in a DDR DRAM, so the number of transmission units used in the data transmission lines is reduced, thereby improving the data transmission speed.